The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
O óxido de zinco nanocristalino (ZnO) é depositado por deposição de camada atômica à temperatura ambiente (RT-ALD) usando dimetilzinco e um Ar umidificado excitado por plasma sem tratamentos térmicos. A observação TEM indicou que os filmes de ZnO depositados foram cristalizados com tamanhos de grão de ~20 nm em Si no decorrer do processo RT-ALD. O ZnO cristalino exibiu características semicondutoras em um transistor de filme fino, onde a mobilidade do efeito de campo foi registrada em 1.29×10-3cm2/V·s. Está confirmado que o filme de ZnO depositado em RT possui anticorrosão à água quente. A taxa de transmissão de vapor de água de 8.4×10-3g·m-2·dia-1 foi medido a partir de um ZnO com 20 nm de espessura e Al com 40 nm de espessura2O3 em um filme de naftalato de polietileno. Neste artigo, discutimos a cristalização de ZnO no processo RT ALD e sua aplicabilidade em eletrônica flexível.
Kazuki YOSHIDA
Yamagata University
Kentaro SAITO
Yamagata University
Keito SOGAI
Yamagata University
Masanori MIURA
Yamagata University
Kensaku KANOMATA
Yamagata University
Bashir AHMMAD
Yamagata University
Shigeru KUBOTA
Yamagata University
Fumihiko HIROSE
Yamagata University
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Kazuki YOSHIDA, Kentaro SAITO, Keito SOGAI, Masanori MIURA, Kensaku KANOMATA, Bashir AHMMAD, Shigeru KUBOTA, Fumihiko HIROSE, "Room Temperature Atomic Layer Deposition of Nano Crystalline ZnO and Its Application for Flexible Electronics" in IEICE TRANSACTIONS on Electronics,
vol. E104-C, no. 7, pp. 363-369, July 2021, doi: 10.1587/transele.2020ECP5034.
Abstract: Nano crystalline zinc oxide (ZnO) is deposited by room temperature atomic layer deposition (RT-ALD) using dimethylzinc and a plasma excited humidified Ar without thermal treatments. The TEM observation indicated that the deposited ZnO films were crystallized with grain sizes of ∼20 nm on Si in the course of the RT-ALD process. The crystalline ZnO exhibited semiconducting characteristics in a thin film transistor, where the field-effect mobility was recorded at 1.29×10-3cm2/V·s. It is confirmed that the RT deposited ZnO film has an anticorrosion to hot water. The water vapor transmission rate of 8.4×10-3g·m-2·day-1 was measured from a 20 nm thick ZnO capped 40 nm thick Al2O3 on a polyethylene naphthalate film. In this paper, we discuss the crystallization of ZnO in the RT ALD process and its applicability to flexible electronics.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2020ECP5034/_p
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@ARTICLE{e104-c_7_363,
author={Kazuki YOSHIDA, Kentaro SAITO, Keito SOGAI, Masanori MIURA, Kensaku KANOMATA, Bashir AHMMAD, Shigeru KUBOTA, Fumihiko HIROSE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Room Temperature Atomic Layer Deposition of Nano Crystalline ZnO and Its Application for Flexible Electronics},
year={2021},
volume={E104-C},
number={7},
pages={363-369},
abstract={Nano crystalline zinc oxide (ZnO) is deposited by room temperature atomic layer deposition (RT-ALD) using dimethylzinc and a plasma excited humidified Ar without thermal treatments. The TEM observation indicated that the deposited ZnO films were crystallized with grain sizes of ∼20 nm on Si in the course of the RT-ALD process. The crystalline ZnO exhibited semiconducting characteristics in a thin film transistor, where the field-effect mobility was recorded at 1.29×10-3cm2/V·s. It is confirmed that the RT deposited ZnO film has an anticorrosion to hot water. The water vapor transmission rate of 8.4×10-3g·m-2·day-1 was measured from a 20 nm thick ZnO capped 40 nm thick Al2O3 on a polyethylene naphthalate film. In this paper, we discuss the crystallization of ZnO in the RT ALD process and its applicability to flexible electronics.},
keywords={},
doi={10.1587/transele.2020ECP5034},
ISSN={1745-1353},
month={July},}
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TY - JOUR
TI - Room Temperature Atomic Layer Deposition of Nano Crystalline ZnO and Its Application for Flexible Electronics
T2 - IEICE TRANSACTIONS on Electronics
SP - 363
EP - 369
AU - Kazuki YOSHIDA
AU - Kentaro SAITO
AU - Keito SOGAI
AU - Masanori MIURA
AU - Kensaku KANOMATA
AU - Bashir AHMMAD
AU - Shigeru KUBOTA
AU - Fumihiko HIROSE
PY - 2021
DO - 10.1587/transele.2020ECP5034
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E104-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2021
AB - Nano crystalline zinc oxide (ZnO) is deposited by room temperature atomic layer deposition (RT-ALD) using dimethylzinc and a plasma excited humidified Ar without thermal treatments. The TEM observation indicated that the deposited ZnO films were crystallized with grain sizes of ∼20 nm on Si in the course of the RT-ALD process. The crystalline ZnO exhibited semiconducting characteristics in a thin film transistor, where the field-effect mobility was recorded at 1.29×10-3cm2/V·s. It is confirmed that the RT deposited ZnO film has an anticorrosion to hot water. The water vapor transmission rate of 8.4×10-3g·m-2·day-1 was measured from a 20 nm thick ZnO capped 40 nm thick Al2O3 on a polyethylene naphthalate film. In this paper, we discuss the crystallization of ZnO in the RT ALD process and its applicability to flexible electronics.
ER -