The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Neste artigo, um oscilador push-push de micro-ondas compacto baseado em um diodo de tunelamento ressonante (RTD) foi fabricado e demonstrado. Uma estrutura indutora em espiral simétrica foi usada para reduzir a área do cavaco. O indutor simétrico projetado é integrado à tecnologia de circuito integrado de micro-ondas monolítico (MMIC) RTD baseado em InP. O circuito ocupa uma área ativa compacta de 0.088 mm2 empregando indutor simétrico. O oscilador RTD fabricado mostra um consumo de energia CC extremamente baixo de 87 µW a uma tensão aplicada de 0.47 V com boa figura de mérito (FOM) de -191 dBc/Hz a uma frequência de oscilação de 27 GHz. Esta é a primeira implementação do oscilador push-push RTD com o indutor espiral simétrico.
Kiwon LEE
Wonkwang University
Yongsik JEONG
Korea Advanced Institute of Science and Technology
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Kiwon LEE, Yongsik JEONG, "A Compact RTD-Based Push-Push Oscillator Using a Symmetrical Spiral Inductor" in IEICE TRANSACTIONS on Electronics,
vol. E104-C, no. 1, pp. 37-39, January 2021, doi: 10.1587/transele.2020ECS6003.
Abstract: In this paper, a compact microwave push-push oscillator based on a resonant tunneling diode (RTD) has been fabricated and demonstrated. A symmetrical spiral inductor structure has been used in order to reduce a chip area. The designed symmetric inductor is integrated into the InP-based RTD monolithic microwave integrated circuit (MMIC) technology. The circuit occupies a compact active area of 0.088 mm2 by employing symmetric inductor. The fabricated RTD oscillator shows an extremely low DC power consumption of 87 µW at an applied voltage of 0.47 V with good figure-of-merit (FOM) of -191 dBc/Hz at an oscillation frequency of 27 GHz. This is the first implementation as the RTD push-push oscillator with the symmetrical spiral inductor.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2020ECS6003/_p
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@ARTICLE{e104-c_1_37,
author={Kiwon LEE, Yongsik JEONG, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Compact RTD-Based Push-Push Oscillator Using a Symmetrical Spiral Inductor},
year={2021},
volume={E104-C},
number={1},
pages={37-39},
abstract={In this paper, a compact microwave push-push oscillator based on a resonant tunneling diode (RTD) has been fabricated and demonstrated. A symmetrical spiral inductor structure has been used in order to reduce a chip area. The designed symmetric inductor is integrated into the InP-based RTD monolithic microwave integrated circuit (MMIC) technology. The circuit occupies a compact active area of 0.088 mm2 by employing symmetric inductor. The fabricated RTD oscillator shows an extremely low DC power consumption of 87 µW at an applied voltage of 0.47 V with good figure-of-merit (FOM) of -191 dBc/Hz at an oscillation frequency of 27 GHz. This is the first implementation as the RTD push-push oscillator with the symmetrical spiral inductor.},
keywords={},
doi={10.1587/transele.2020ECS6003},
ISSN={1745-1353},
month={January},}
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TY - JOUR
TI - A Compact RTD-Based Push-Push Oscillator Using a Symmetrical Spiral Inductor
T2 - IEICE TRANSACTIONS on Electronics
SP - 37
EP - 39
AU - Kiwon LEE
AU - Yongsik JEONG
PY - 2021
DO - 10.1587/transele.2020ECS6003
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E104-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2021
AB - In this paper, a compact microwave push-push oscillator based on a resonant tunneling diode (RTD) has been fabricated and demonstrated. A symmetrical spiral inductor structure has been used in order to reduce a chip area. The designed symmetric inductor is integrated into the InP-based RTD monolithic microwave integrated circuit (MMIC) technology. The circuit occupies a compact active area of 0.088 mm2 by employing symmetric inductor. The fabricated RTD oscillator shows an extremely low DC power consumption of 87 µW at an applied voltage of 0.47 V with good figure-of-merit (FOM) of -191 dBc/Hz at an oscillation frequency of 27 GHz. This is the first implementation as the RTD push-push oscillator with the symmetrical spiral inductor.
ER -