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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
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Na litografia de tela plana (FPD), são necessárias alta resolução e grande profundidade de foco (DOF). As demandas por alto rendimento exigiram o uso de grandes placas de vidro e áreas de exposição, aumentando assim a irregularidade focal e reduzindo a latitude do processo. Assim, é necessário um grande DOF, particularmente para litografia de alta resolução. Para fabricar futuros monitores de alta definição, prevê-se que sejam necessários 1.0 μm de linha e espaço (L/S), e é necessária uma técnica para atingir essa resolução com DOF adequado. Para melhorar a resolução e o DOF, foram introduzidas técnicas de aprimoramento de resolução (RETs). RETs como iluminação fora do eixo (OAI) e máscaras de mudança de fase (PSMs) têm sido amplamente utilizados em litografia de semicondutores, que utiliza iluminação de banda estreita. Para usar efetivamente RETs na litografia FPD, é necessária modificação para iluminação de banda larga porque a litografia FPD utiliza essa iluminação como luz de exposição. No entanto, até agora, os RETs para iluminação de banda larga não foram estudados. Este estudo teve como objetivo desenvolver técnicas para alcançar resolução de 1.0μm L/S com um DOF aceitável. Para tanto, este artigo propõe um método que combina nosso RET desenvolvido anteriormente, ou seja, iluminação de espectro dividido (DSI), com um PSM atenuado (Att. PSM). Observações teóricas e simulações apresentam o projeto de um PSM para iluminação de banda larga. A transmitância e a mudança de fase, cujo grau varia de acordo com o comprimento de onda, são determinadas em termos de contraste da imagem aérea e perda de resistência. O design do DSI para um Att. O PSM também é discutido considerando o contraste da imagem, DOF e intensidade de iluminação. Finalmente, os resultados de exposição de 1.0 μm L/S usando técnicas DSI e PSM são mostrados, demonstrando que um PSM melhora muito o perfil de resistência, e o DSI aumenta o DOF em aproximadamente 30% em comparação com o OAI convencional. Assim, DSI e PSMs podem ser usados em aplicações práticas para atingir 1.0μm L/S com DOF suficiente.
Kanji SUZUKI
Canon Inc.
Manabu HAKKO
Canon Inc.
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Kanji SUZUKI, Manabu HAKKO, "Improved Resolution Enhancement Technique for Broadband Illumination in Flat Panel Display Lithography" in IEICE TRANSACTIONS on Electronics,
vol. E105-C, no. 2, pp. 59-67, February 2022, doi: 10.1587/transele.2021DII0004.
Abstract: In flat panel display (FPD) lithography, a high resolution and large depth of focus (DOF) are required. The demands for high throughput have necessitated the use of large glass plates and exposure areas, thereby increasing focal unevenness and reducing process latitude. Thus, a large DOF is needed, particularly for high-resolution lithography. To manufacture future high-definition displays, 1.0μm line and space (L/S) is predicted to be required, and a technique to achieve this resolution with adequate DOF is necessary. To improve the resolution and DOF, resolution enhancement techniques (RETs) have been introduced. RETs such as off-axis illumination (OAI) and phase-shift masks (PSMs) have been widely used in semiconductor lithography, which utilizes narrowband illumination. To effectively use RETs in FPD lithography, modification for broadband illumination is required because FPD lithography utilizes such illumination as exposure light. However, thus far, RETs for broadband illumination have not been studied. This study aimed to develop techniques to achieve 1.0μm L/S resolution with an acceptable DOF. To this end, this paper proposes a method that combines our previously developed RET, namely, divided spectrum illumination (DSI), with an attenuated PSM (Att. PSM). Theoretical observations and simulations present the design of a PSM for broadband illumination. The transmittance and phase shift, whose degree varies according to the wavelength, are determined in terms of aerial image contrast and resist loss. The design of DSI for an Att. PSM is also discussed considering image contrast, DOF, and illumination intensity. Finally, the exposure results of 1.0μm L/S using DSI and PSM techniques are shown, demonstrating that a PSM greatly improves the resist profile, and DSI enhances the DOF by approximately 30% compared to conventional OAI. Thus, DSI and PSMs can be used in practical applications for achieving 1.0μm L/S with sufficient DOF.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021DII0004/_p
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@ARTICLE{e105-c_2_59,
author={Kanji SUZUKI, Manabu HAKKO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Improved Resolution Enhancement Technique for Broadband Illumination in Flat Panel Display Lithography},
year={2022},
volume={E105-C},
number={2},
pages={59-67},
abstract={In flat panel display (FPD) lithography, a high resolution and large depth of focus (DOF) are required. The demands for high throughput have necessitated the use of large glass plates and exposure areas, thereby increasing focal unevenness and reducing process latitude. Thus, a large DOF is needed, particularly for high-resolution lithography. To manufacture future high-definition displays, 1.0μm line and space (L/S) is predicted to be required, and a technique to achieve this resolution with adequate DOF is necessary. To improve the resolution and DOF, resolution enhancement techniques (RETs) have been introduced. RETs such as off-axis illumination (OAI) and phase-shift masks (PSMs) have been widely used in semiconductor lithography, which utilizes narrowband illumination. To effectively use RETs in FPD lithography, modification for broadband illumination is required because FPD lithography utilizes such illumination as exposure light. However, thus far, RETs for broadband illumination have not been studied. This study aimed to develop techniques to achieve 1.0μm L/S resolution with an acceptable DOF. To this end, this paper proposes a method that combines our previously developed RET, namely, divided spectrum illumination (DSI), with an attenuated PSM (Att. PSM). Theoretical observations and simulations present the design of a PSM for broadband illumination. The transmittance and phase shift, whose degree varies according to the wavelength, are determined in terms of aerial image contrast and resist loss. The design of DSI for an Att. PSM is also discussed considering image contrast, DOF, and illumination intensity. Finally, the exposure results of 1.0μm L/S using DSI and PSM techniques are shown, demonstrating that a PSM greatly improves the resist profile, and DSI enhances the DOF by approximately 30% compared to conventional OAI. Thus, DSI and PSMs can be used in practical applications for achieving 1.0μm L/S with sufficient DOF.},
keywords={},
doi={10.1587/transele.2021DII0004},
ISSN={1745-1353},
month={February},}
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TY - JOUR
TI - Improved Resolution Enhancement Technique for Broadband Illumination in Flat Panel Display Lithography
T2 - IEICE TRANSACTIONS on Electronics
SP - 59
EP - 67
AU - Kanji SUZUKI
AU - Manabu HAKKO
PY - 2022
DO - 10.1587/transele.2021DII0004
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 2
JA - IEICE TRANSACTIONS on Electronics
Y1 - February 2022
AB - In flat panel display (FPD) lithography, a high resolution and large depth of focus (DOF) are required. The demands for high throughput have necessitated the use of large glass plates and exposure areas, thereby increasing focal unevenness and reducing process latitude. Thus, a large DOF is needed, particularly for high-resolution lithography. To manufacture future high-definition displays, 1.0μm line and space (L/S) is predicted to be required, and a technique to achieve this resolution with adequate DOF is necessary. To improve the resolution and DOF, resolution enhancement techniques (RETs) have been introduced. RETs such as off-axis illumination (OAI) and phase-shift masks (PSMs) have been widely used in semiconductor lithography, which utilizes narrowband illumination. To effectively use RETs in FPD lithography, modification for broadband illumination is required because FPD lithography utilizes such illumination as exposure light. However, thus far, RETs for broadband illumination have not been studied. This study aimed to develop techniques to achieve 1.0μm L/S resolution with an acceptable DOF. To this end, this paper proposes a method that combines our previously developed RET, namely, divided spectrum illumination (DSI), with an attenuated PSM (Att. PSM). Theoretical observations and simulations present the design of a PSM for broadband illumination. The transmittance and phase shift, whose degree varies according to the wavelength, are determined in terms of aerial image contrast and resist loss. The design of DSI for an Att. PSM is also discussed considering image contrast, DOF, and illumination intensity. Finally, the exposure results of 1.0μm L/S using DSI and PSM techniques are shown, demonstrating that a PSM greatly improves the resist profile, and DSI enhances the DOF by approximately 30% compared to conventional OAI. Thus, DSI and PSMs can be used in practical applications for achieving 1.0μm L/S with sufficient DOF.
ER -