The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Este artigo apresenta um estudo de simulação do comportamento de impressão de três diferentes sistemas resistentes EUV. Modelos estocásticos para resistência negativa à base de metal e resistência convencional amplificada quimicamente (CAR) foram calibrados e depois validados. Quanto ao CAR de desenvolvimento de tom negativo (NTD), partimos de um CAR de desenvolvimento de tom positivo (PTD) calibrado (material) e modelos de desenvolvimento de NTD, uma vez que medições de última geração não estão disponíveis. Um estudo conceitual entre PTD CAR e NTD CAR mostra que a flutuação estocástica do inibidor difere para PTD CAR: o nível do inibidor apresenta pequena flutuação (desenvolvimento de Mack). Para DTN CAR, a flutuação do inibidor depende do tipo de DTN, que é definido pela categorização da diferença entre os limiares de desenvolvimento de DTN e de DPT. Os respectivos tipos de DTN têm diferentes níveis de concentração de inibidor. Além disso, a impressão do furo de contato entre o negativo à base de metal e o NTD CAR foi comparada para esclarecer a janela do processo estocástico (PW) para máscara de tom invertido. Para última comparação, a imagem aérea (AI) e o efeito do elétron secundário são comparáveis. Finalmente, a uniformidade local do CD (LCDU) para o mesmo tamanho de 20 nm e furo de contato de passo de 40 nm foi comparada entre as três resistências diferentes. O comportamento dependente da dose de LCDU e PW estocástico para NTD foi diferente para o PTD CAR e a resistência à base de metal. Para NTD CAR, foram observados pequenos níveis de inibidor e grandes flutuações de inibidor em torno do limiar de desenvolvimento, causando aumento de LCDU, que é específico para a resistência inversa ao desenvolvimento de Mack.
Itaru KAMOHARA
Ulrich WELLING
Synopsys GmbH
Ulrich KLOSTERMANN
Synopsys GmbH
Wolfgang DEMMERLE
Synopsys GmbH
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copiar
Itaru KAMOHARA, Ulrich WELLING, Ulrich KLOSTERMANN, Wolfgang DEMMERLE, "Stochastic Modeling and Local CD Uniformity Comparison between Negative Metal-Based, Negative- and Positive-Tone Development EUV Resists" in IEICE TRANSACTIONS on Electronics,
vol. E105-C, no. 1, pp. 35-46, January 2022, doi: 10.1587/transele.2021ECP5010.
Abstract: This paper presents a simulation study on the printing behavior of three different EUV resist systems. Stochastic models for negative metal-based resist and conventional chemically amplified resist (CAR) were calibrated and then validated. As for negative-tone development (NTD) CAR, we commenced from a positive-tone development (PTD) CAR calibrated (material) and NTD development models, since state-of-the-art measurements are not available. A conceptual study between PTD CAR and NTD CAR shows that the stochastic inhibitor fluctuation differs for PTD CAR: the inhibitor level exhibits small fluctuation (Mack development). For NTD CAR, the inhibitor fluctuation depends on the NTD type, which is defined by categorizing the difference between the NTD and PTD development thresholds. Respective NTD types have different inhibitor concentration level. Moreover, contact hole printing between negative metal-based and NTD CAR was compared to clarify the stochastic process window (PW) for tone reversed mask. For latter comparison, the aerial image (AI) and secondary electron effect are comparable. Finally, the local CD uniformity (LCDU) for the same 20 nm size, 40 nm pitch contact hole was compared among the three different resists. Dose-dependent behavior of LCDU and stochastic PW for NTD were different for the PTD CAR and metal-based resist. For NTD CAR, small inhibitor level and large inhibitor fluctuation around the development threshold were observed, causing LCDU increase, which is specific to the inverse Mack development resist.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021ECP5010/_p
Copiar
@ARTICLE{e105-c_1_35,
author={Itaru KAMOHARA, Ulrich WELLING, Ulrich KLOSTERMANN, Wolfgang DEMMERLE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Stochastic Modeling and Local CD Uniformity Comparison between Negative Metal-Based, Negative- and Positive-Tone Development EUV Resists},
year={2022},
volume={E105-C},
number={1},
pages={35-46},
abstract={This paper presents a simulation study on the printing behavior of three different EUV resist systems. Stochastic models for negative metal-based resist and conventional chemically amplified resist (CAR) were calibrated and then validated. As for negative-tone development (NTD) CAR, we commenced from a positive-tone development (PTD) CAR calibrated (material) and NTD development models, since state-of-the-art measurements are not available. A conceptual study between PTD CAR and NTD CAR shows that the stochastic inhibitor fluctuation differs for PTD CAR: the inhibitor level exhibits small fluctuation (Mack development). For NTD CAR, the inhibitor fluctuation depends on the NTD type, which is defined by categorizing the difference between the NTD and PTD development thresholds. Respective NTD types have different inhibitor concentration level. Moreover, contact hole printing between negative metal-based and NTD CAR was compared to clarify the stochastic process window (PW) for tone reversed mask. For latter comparison, the aerial image (AI) and secondary electron effect are comparable. Finally, the local CD uniformity (LCDU) for the same 20 nm size, 40 nm pitch contact hole was compared among the three different resists. Dose-dependent behavior of LCDU and stochastic PW for NTD were different for the PTD CAR and metal-based resist. For NTD CAR, small inhibitor level and large inhibitor fluctuation around the development threshold were observed, causing LCDU increase, which is specific to the inverse Mack development resist.},
keywords={},
doi={10.1587/transele.2021ECP5010},
ISSN={1745-1353},
month={January},}
Copiar
TY - JOUR
TI - Stochastic Modeling and Local CD Uniformity Comparison between Negative Metal-Based, Negative- and Positive-Tone Development EUV Resists
T2 - IEICE TRANSACTIONS on Electronics
SP - 35
EP - 46
AU - Itaru KAMOHARA
AU - Ulrich WELLING
AU - Ulrich KLOSTERMANN
AU - Wolfgang DEMMERLE
PY - 2022
DO - 10.1587/transele.2021ECP5010
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2022
AB - This paper presents a simulation study on the printing behavior of three different EUV resist systems. Stochastic models for negative metal-based resist and conventional chemically amplified resist (CAR) were calibrated and then validated. As for negative-tone development (NTD) CAR, we commenced from a positive-tone development (PTD) CAR calibrated (material) and NTD development models, since state-of-the-art measurements are not available. A conceptual study between PTD CAR and NTD CAR shows that the stochastic inhibitor fluctuation differs for PTD CAR: the inhibitor level exhibits small fluctuation (Mack development). For NTD CAR, the inhibitor fluctuation depends on the NTD type, which is defined by categorizing the difference between the NTD and PTD development thresholds. Respective NTD types have different inhibitor concentration level. Moreover, contact hole printing between negative metal-based and NTD CAR was compared to clarify the stochastic process window (PW) for tone reversed mask. For latter comparison, the aerial image (AI) and secondary electron effect are comparable. Finally, the local CD uniformity (LCDU) for the same 20 nm size, 40 nm pitch contact hole was compared among the three different resists. Dose-dependent behavior of LCDU and stochastic PW for NTD were different for the PTD CAR and metal-based resist. For NTD CAR, small inhibitor level and large inhibitor fluctuation around the development threshold were observed, causing LCDU increase, which is specific to the inverse Mack development resist.
ER -