The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
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Este artigo relata chipsets de nitreto de gálio (GaN) de banda X para módulos de transmissão-recepção (T/R) econômicos de 20 W. Os componentes do chipset incluem um amplificador de driver (DA) de circuito integrado de micro-ondas monolítico GaN-on-Si (MMIC), um amplificador de alta potência GaN-on-SiC (HPA) com circuitos correspondentes de GaAs, um GaN-on-Si HPA de alto ganho com um circuito de correspondência de saída GaAs e um switch MMIC (SW) GaN-on-Si. Utilizando a combinação de DA ou HPA único de alto ganho, as configurações de dois tipos de módulos T/R podem ser realizadas. O GaN-on-Si MMIC DA demonstra uma potência de saída de 6.4-7.4W, um ganho associado de 22.3-24.6dB e uma eficiência de potência adicionada (PAE) de 32-36% em 9.0-11.0GHz. Um GaN-on-SiC HPA com circuitos correspondentes de GaAs exibiu uma potência de saída de 20-28W, ganho associado de 7.8-10.7dB e um PAE de 40-56% em 9.0-11.0GHz. O GaN-on-Si HPA de alto ganho com um circuito de correspondência de saída GaAs exibe uma potência de saída de 15-30W, ganho associado de 27-30dB e PAE de 26-33% em 9.0-11.0GHz. O switch MMIC GaN-on-Si demonstra perdas de inserção de 1.1-1.3dB e isolamento de 10.1-14.7dB em 8.0-11.5GHz. Ao empregar configurações de circuito econômicas, os custos desses chipsets são estimados em cerca de metade dos custos dos chipsets convencionais.
Jun KAMIOKA
Mitsubishi Electric Corporation
Yoshifumi KAWAMURA
Mitsubishi Electric Corporation
Ryota KOMARU
Mitsubishi Electric Corporation
Masatake HANGAI
Mitsubishi Electric Corporation
Yoshitaka KAMO
Mitsubishi Electric Corporation
Tetsuo KODERA
Tokyo Institute of Technology
Shintaro SHINJO
Mitsubishi Electric Corporation
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Jun KAMIOKA, Yoshifumi KAWAMURA, Ryota KOMARU, Masatake HANGAI, Yoshitaka KAMO, Tetsuo KODERA, Shintaro SHINJO, "X-Band GaN Chipsets for Cost-Effective 20W T/R Modules" in IEICE TRANSACTIONS on Electronics,
vol. E105-C, no. 5, pp. 194-202, May 2022, doi: 10.1587/transele.2021ECP5024.
Abstract: This paper reports on X-band Gallium Nitride (GaN) chipsets for cost-effective 20W transmit-receive (T/R) modules. The chipset components include a GaN-on-Si monolithic microwave integrated circuit (MMIC) driver amplifier (DA), a GaN-on-SiC high power amplifier (HPA) with GaAs matching circuits, a high-gain GaN-on-Si HPA with a GaAs output matching circuit, and a GaN-on-Si MMIC switch (SW). By utilizing either combination of the DA or single high-gain HPA, the configurations of two T/R module types can be realized. The GaN-on-Si MMIC DA demonstrates an output power of 6.4-7.4W, an associate gain of 22.3-24.6dB and a power added efficiency (PAE) of 32-36% over 9.0-11.0GHz. A GaN-on-SiC HPA with GaAs matching circuits exhibited an output power of 20-28W, associate gain of 7.8-10.7dB, and a PAE of 40-56% over 9.0-11.0GHz. The high-gain GaN-on-Si HPA with a GaAs output matching circuit exhibits an output power of 15-30W, associate gain of 27-30dB, and PAE of 26-33% over 9.0-11.0GHz. The GaN-on-Si MMIC switch demonstrates insertion losses of 1.1-1.3dB and isolation of 10.1-14.7dB over 8.0-11.5GHz. By employing cost-effective circuit configurations, the costs of these chipsets are estimated to be about half that of conventional chipsets.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021ECP5024/_p
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@ARTICLE{e105-c_5_194,
author={Jun KAMIOKA, Yoshifumi KAWAMURA, Ryota KOMARU, Masatake HANGAI, Yoshitaka KAMO, Tetsuo KODERA, Shintaro SHINJO, },
journal={IEICE TRANSACTIONS on Electronics},
title={X-Band GaN Chipsets for Cost-Effective 20W T/R Modules},
year={2022},
volume={E105-C},
number={5},
pages={194-202},
abstract={This paper reports on X-band Gallium Nitride (GaN) chipsets for cost-effective 20W transmit-receive (T/R) modules. The chipset components include a GaN-on-Si monolithic microwave integrated circuit (MMIC) driver amplifier (DA), a GaN-on-SiC high power amplifier (HPA) with GaAs matching circuits, a high-gain GaN-on-Si HPA with a GaAs output matching circuit, and a GaN-on-Si MMIC switch (SW). By utilizing either combination of the DA or single high-gain HPA, the configurations of two T/R module types can be realized. The GaN-on-Si MMIC DA demonstrates an output power of 6.4-7.4W, an associate gain of 22.3-24.6dB and a power added efficiency (PAE) of 32-36% over 9.0-11.0GHz. A GaN-on-SiC HPA with GaAs matching circuits exhibited an output power of 20-28W, associate gain of 7.8-10.7dB, and a PAE of 40-56% over 9.0-11.0GHz. The high-gain GaN-on-Si HPA with a GaAs output matching circuit exhibits an output power of 15-30W, associate gain of 27-30dB, and PAE of 26-33% over 9.0-11.0GHz. The GaN-on-Si MMIC switch demonstrates insertion losses of 1.1-1.3dB and isolation of 10.1-14.7dB over 8.0-11.5GHz. By employing cost-effective circuit configurations, the costs of these chipsets are estimated to be about half that of conventional chipsets.},
keywords={},
doi={10.1587/transele.2021ECP5024},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - X-Band GaN Chipsets for Cost-Effective 20W T/R Modules
T2 - IEICE TRANSACTIONS on Electronics
SP - 194
EP - 202
AU - Jun KAMIOKA
AU - Yoshifumi KAWAMURA
AU - Ryota KOMARU
AU - Masatake HANGAI
AU - Yoshitaka KAMO
AU - Tetsuo KODERA
AU - Shintaro SHINJO
PY - 2022
DO - 10.1587/transele.2021ECP5024
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2022
AB - This paper reports on X-band Gallium Nitride (GaN) chipsets for cost-effective 20W transmit-receive (T/R) modules. The chipset components include a GaN-on-Si monolithic microwave integrated circuit (MMIC) driver amplifier (DA), a GaN-on-SiC high power amplifier (HPA) with GaAs matching circuits, a high-gain GaN-on-Si HPA with a GaAs output matching circuit, and a GaN-on-Si MMIC switch (SW). By utilizing either combination of the DA or single high-gain HPA, the configurations of two T/R module types can be realized. The GaN-on-Si MMIC DA demonstrates an output power of 6.4-7.4W, an associate gain of 22.3-24.6dB and a power added efficiency (PAE) of 32-36% over 9.0-11.0GHz. A GaN-on-SiC HPA with GaAs matching circuits exhibited an output power of 20-28W, associate gain of 7.8-10.7dB, and a PAE of 40-56% over 9.0-11.0GHz. The high-gain GaN-on-Si HPA with a GaAs output matching circuit exhibits an output power of 15-30W, associate gain of 27-30dB, and PAE of 26-33% over 9.0-11.0GHz. The GaN-on-Si MMIC switch demonstrates insertion losses of 1.1-1.3dB and isolation of 10.1-14.7dB over 8.0-11.5GHz. By employing cost-effective circuit configurations, the costs of these chipsets are estimated to be about half that of conventional chipsets.
ER -