The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Velocidade de comutação rápida, baixo consumo de energia e boa estabilidade são algumas das propriedades importantes da junção de túnel magnético de anisotropia magnética controlada por tensão assistida por torque de transferência de spin (VCMA-MTJ assistida por STT) que torna o somador completo não volátil (NV-FA) baseado nele atraente para a Internet das Coisas. No entanto, os efeitos das variações do processo no desempenho do VCMA-MTJ e NV-FA assistido por STT serão cada vez mais óbvios com a redução da escala do VCMA-MTJ assistido por STT e a melhoria da integração do chip. Neste artigo, um modelo elétrico mais preciso de VCMA-MTJ assistido por STT é estabelecido com base na dinâmica de magnetização e nas variações do processo no processo de crescimento do filme e no processo de gravação. Em particular, a tensão de escrita é reduzida para 0.7 V à medida que a espessura do filme é reduzida para 0.9 nm. Os efeitos da variação da espessura da camada livre (γtf) e variação da espessura da camada de óxido (γtox) na comutação de estado, bem como o efeito da variação da razão de magnetorresistência do túnel (β) na margem de detecção (SM) são estudados detalhadamente. Considerando que as variações do processo acima seguem distribuição gaussiana, a simulação de Monte Carlo é utilizada para estudar os efeitos das variações do processo nas operações de escrita e saída do NV-FA. O resultado mostra que o estado do VCMA-MTJ assistido por STT pode ser alterado abaixo de -0.3%≤γtf≤6% ou -23%≤γtox≤0.2%. SM é reduzido em 16.0% com aumentos de β de 0 a 30%. As taxas de erro de escrita '0' no NV-FA podem ser reduzidas aumentando Vb1 ou aumentando positivo Vb2. As taxas de erro de escrita '1' podem ser reduzidas aumentando Vb1 ou decrescente negativo Vb2. A redução das taxas de erro de saída pode ser realizada de forma eficaz aumentando a tensão de acionamento (Vdd).
Dongyue JIN
Beijing University of Technology
Luming CAO
Beijing University of Technology
You WANG
Faulty of Hefei Innovation Research Institute, Beihang University
Xiaoxue JIA
Beijing University of Technology
Yongan PAN
Beijing University of Technology
Yuxin ZHOU
Beijing University of Technology
Xin LEI
Beijing University of Technology
Yuanyuan LIU
Beijing University of Technology
Yingqi YANG
Beijing University of Technology
Wanrong ZHANG
Beijing University of Technology
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copiar
Dongyue JIN, Luming CAO, You WANG, Xiaoxue JIA, Yongan PAN, Yuxin ZHOU, Xin LEI, Yuanyuan LIU, Yingqi YANG, Wanrong ZHANG, "Process Variation Based Electrical Model of STT-Assisted VCMA-MTJ and Its Application in NV-FA" in IEICE TRANSACTIONS on Electronics,
vol. E105-C, no. 11, pp. 704-711, November 2022, doi: 10.1587/transele.2021ECP5061.
Abstract: Fast switching speed, low power consumption, and good stability are some of the important properties of spin transfer torque assisted voltage controlled magnetic anisotropy magnetic tunnel junction (STT-assisted VCMA-MTJ) which makes the non-volatile full adder (NV-FA) based on it attractive for Internet of Things. However, the effects of process variations on the performances of STT-assisted VCMA-MTJ and NV-FA will be more and more obvious with the downscaling of STT-assisted VCMA-MTJ and the improvement of chip integration. In this paper, a more accurate electrical model of STT-assisted VCMA-MTJ is established on the basis of the magnetization dynamics and the process variations in film growth process and etching process. In particular, the write voltage is reduced to 0.7 V as the film thickness is reduced to 0.9 nm. The effects of free layer thickness variation (γtf) and oxide layer thickness variation (γtox) on the state switching as well as the effect of tunnel magnetoresistance ratio variation (β) on the sensing margin (SM) are studied in detail. Considering that the above process variations follow Gaussian distribution, Monte Carlo simulation is used to study the effects of the process variations on the writing and output operations of NV-FA. The result shows that the state of STT-assisted VCMA-MTJ can be switched under -0.3%≤γtf≤6% or -23%≤γtox≤0.2%. SM is reduced by 16.0% with β increases from 0 to 30%. The error rates of writing ‘0’ in the NV-FA can be reduced by increasing Vb1 or increasing positive Vb2. The error rates of writing ‘1’ can be reduced by increasing Vb1 or decreasing negative Vb2. The reduction of the output error rates can be realized effectively by increasing the driving voltage (Vdd).
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021ECP5061/_p
Copiar
@ARTICLE{e105-c_11_704,
author={Dongyue JIN, Luming CAO, You WANG, Xiaoxue JIA, Yongan PAN, Yuxin ZHOU, Xin LEI, Yuanyuan LIU, Yingqi YANG, Wanrong ZHANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Process Variation Based Electrical Model of STT-Assisted VCMA-MTJ and Its Application in NV-FA},
year={2022},
volume={E105-C},
number={11},
pages={704-711},
abstract={Fast switching speed, low power consumption, and good stability are some of the important properties of spin transfer torque assisted voltage controlled magnetic anisotropy magnetic tunnel junction (STT-assisted VCMA-MTJ) which makes the non-volatile full adder (NV-FA) based on it attractive for Internet of Things. However, the effects of process variations on the performances of STT-assisted VCMA-MTJ and NV-FA will be more and more obvious with the downscaling of STT-assisted VCMA-MTJ and the improvement of chip integration. In this paper, a more accurate electrical model of STT-assisted VCMA-MTJ is established on the basis of the magnetization dynamics and the process variations in film growth process and etching process. In particular, the write voltage is reduced to 0.7 V as the film thickness is reduced to 0.9 nm. The effects of free layer thickness variation (γtf) and oxide layer thickness variation (γtox) on the state switching as well as the effect of tunnel magnetoresistance ratio variation (β) on the sensing margin (SM) are studied in detail. Considering that the above process variations follow Gaussian distribution, Monte Carlo simulation is used to study the effects of the process variations on the writing and output operations of NV-FA. The result shows that the state of STT-assisted VCMA-MTJ can be switched under -0.3%≤γtf≤6% or -23%≤γtox≤0.2%. SM is reduced by 16.0% with β increases from 0 to 30%. The error rates of writing ‘0’ in the NV-FA can be reduced by increasing Vb1 or increasing positive Vb2. The error rates of writing ‘1’ can be reduced by increasing Vb1 or decreasing negative Vb2. The reduction of the output error rates can be realized effectively by increasing the driving voltage (Vdd).},
keywords={},
doi={10.1587/transele.2021ECP5061},
ISSN={1745-1353},
month={November},}
Copiar
TY - JOUR
TI - Process Variation Based Electrical Model of STT-Assisted VCMA-MTJ and Its Application in NV-FA
T2 - IEICE TRANSACTIONS on Electronics
SP - 704
EP - 711
AU - Dongyue JIN
AU - Luming CAO
AU - You WANG
AU - Xiaoxue JIA
AU - Yongan PAN
AU - Yuxin ZHOU
AU - Xin LEI
AU - Yuanyuan LIU
AU - Yingqi YANG
AU - Wanrong ZHANG
PY - 2022
DO - 10.1587/transele.2021ECP5061
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2022
AB - Fast switching speed, low power consumption, and good stability are some of the important properties of spin transfer torque assisted voltage controlled magnetic anisotropy magnetic tunnel junction (STT-assisted VCMA-MTJ) which makes the non-volatile full adder (NV-FA) based on it attractive for Internet of Things. However, the effects of process variations on the performances of STT-assisted VCMA-MTJ and NV-FA will be more and more obvious with the downscaling of STT-assisted VCMA-MTJ and the improvement of chip integration. In this paper, a more accurate electrical model of STT-assisted VCMA-MTJ is established on the basis of the magnetization dynamics and the process variations in film growth process and etching process. In particular, the write voltage is reduced to 0.7 V as the film thickness is reduced to 0.9 nm. The effects of free layer thickness variation (γtf) and oxide layer thickness variation (γtox) on the state switching as well as the effect of tunnel magnetoresistance ratio variation (β) on the sensing margin (SM) are studied in detail. Considering that the above process variations follow Gaussian distribution, Monte Carlo simulation is used to study the effects of the process variations on the writing and output operations of NV-FA. The result shows that the state of STT-assisted VCMA-MTJ can be switched under -0.3%≤γtf≤6% or -23%≤γtox≤0.2%. SM is reduced by 16.0% with β increases from 0 to 30%. The error rates of writing ‘0’ in the NV-FA can be reduced by increasing Vb1 or increasing positive Vb2. The error rates of writing ‘1’ can be reduced by increasing Vb1 or decreasing negative Vb2. The reduction of the output error rates can be realized effectively by increasing the driving voltage (Vdd).
ER -