The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Os parâmetros S dos diodos de tunelamento ressonante de barreira tripla InGaAs / InAlAs (TBRTDs) foram medidos até 67 GHz com várias áreas de mesa e várias tensões de polarização. Os dados de admissão de TBRTDs simples são incorporados e avaliados eliminando componentes parasitas com a ajuda de simulações eletromagnéticas para estruturas de dispositivos fabricadas específicas. A espectroscopia de admitância até 67 GHz é aplicada para TBRTDs nus pela primeira vez e uma relação de Kramers-Kronig com função Lorentziana é considerada um modelo consistente para a admitância, especialmente em casos de condições de baixa polarização. O tempo de relaxamento incluído na função Lorentziana é avaliado provisoriamente como da ordem de vários pico segundos.
Kotaro AIKAWA
Tokyo Metropolitan University
Michihiko SUHARA
Tokyo Metropolitan University
Takumi KIMURA
Tokyo Metropolitan University
Junki WAKAYAMA
Tokyo Metropolitan University
Takeshi MAKINO
Tokyo Metropolitan University
Katsuhiro USUI
Tokyo Metropolitan University
Kiyoto ASAKAWA
Tokyo Metropolitan College of Industrial Technology
Kouichi AKAHANE
National Institute of Information and Communications Technology (NICT)
Issei WATANABE
National Institute of Information and Communications Technology (NICT)
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Kotaro AIKAWA, Michihiko SUHARA, Takumi KIMURA, Junki WAKAYAMA, Takeshi MAKINO, Katsuhiro USUI, Kiyoto ASAKAWA, Kouichi AKAHANE, Issei WATANABE, "Admittance Spectroscopy Up to 67 GHz in InGaAs/InAlAs Triple-Barrier Resonant Tunneling Diodes" in IEICE TRANSACTIONS on Electronics,
vol. E105-C, no. 10, pp. 622-626, October 2022, doi: 10.1587/transele.2021FUS0006.
Abstract: S-parameters of InGaAs/InAlAs triple-barrier resonant tunneling diodes (TBRTDs) were measured up to 67 GHz with various mesa areas and various bias voltages. Admittance data of bare TBRTDs are deembedded and evaluated by getting rid of parasitic components with help of electromagnetic simulations for particular fabricated device structures. Admittance spectroscopy up to 67 GHz is applied for bare TBRTDs for the first time and a Kramers-Kronig relation with Lorentzian function is found to be a consistent model for the admittance especially in cases of low bias conditions. Relaxation time included in the Lorentzian function are tentatively evaluated as the order of several pico second.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2021FUS0006/_p
Copiar
@ARTICLE{e105-c_10_622,
author={Kotaro AIKAWA, Michihiko SUHARA, Takumi KIMURA, Junki WAKAYAMA, Takeshi MAKINO, Katsuhiro USUI, Kiyoto ASAKAWA, Kouichi AKAHANE, Issei WATANABE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Admittance Spectroscopy Up to 67 GHz in InGaAs/InAlAs Triple-Barrier Resonant Tunneling Diodes},
year={2022},
volume={E105-C},
number={10},
pages={622-626},
abstract={S-parameters of InGaAs/InAlAs triple-barrier resonant tunneling diodes (TBRTDs) were measured up to 67 GHz with various mesa areas and various bias voltages. Admittance data of bare TBRTDs are deembedded and evaluated by getting rid of parasitic components with help of electromagnetic simulations for particular fabricated device structures. Admittance spectroscopy up to 67 GHz is applied for bare TBRTDs for the first time and a Kramers-Kronig relation with Lorentzian function is found to be a consistent model for the admittance especially in cases of low bias conditions. Relaxation time included in the Lorentzian function are tentatively evaluated as the order of several pico second.},
keywords={},
doi={10.1587/transele.2021FUS0006},
ISSN={1745-1353},
month={October},}
Copiar
TY - JOUR
TI - Admittance Spectroscopy Up to 67 GHz in InGaAs/InAlAs Triple-Barrier Resonant Tunneling Diodes
T2 - IEICE TRANSACTIONS on Electronics
SP - 622
EP - 626
AU - Kotaro AIKAWA
AU - Michihiko SUHARA
AU - Takumi KIMURA
AU - Junki WAKAYAMA
AU - Takeshi MAKINO
AU - Katsuhiro USUI
AU - Kiyoto ASAKAWA
AU - Kouichi AKAHANE
AU - Issei WATANABE
PY - 2022
DO - 10.1587/transele.2021FUS0006
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E105-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2022
AB - S-parameters of InGaAs/InAlAs triple-barrier resonant tunneling diodes (TBRTDs) were measured up to 67 GHz with various mesa areas and various bias voltages. Admittance data of bare TBRTDs are deembedded and evaluated by getting rid of parasitic components with help of electromagnetic simulations for particular fabricated device structures. Admittance spectroscopy up to 67 GHz is applied for bare TBRTDs for the first time and a Kramers-Kronig relation with Lorentzian function is found to be a consistent model for the admittance especially in cases of low bias conditions. Relaxation time included in the Lorentzian function are tentatively evaluated as the order of several pico second.
ER -