The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Propusemos e demonstramos um processo de fabricação de dispositivos de pontos quânticos fisicamente definidos utilizando litografia por feixe de elétrons empregando uma resistência de tom negativo para integração de alta densidade de bits quânticos de silício (qubits). A caracterização elétrica em 3.8K exibiu os chamados diamantes de Coulomb, que indicam operação bem-sucedida do dispositivo como transistores de elétron único. O processo de fabricação do dispositivo proposto será útil devido à sua alta compatibilidade com o processo de integração em larga escala.
Shimpei NISHIYAMA
Tokyo Institute of Technology,National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba
Kimihiko KATO
National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba
Yongxun LIU
National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba
Raisei MIZOKUCHI
Tokyo Institute of Technology
Jun YONEDA
Tokyo Institute of Technology
Tetsuo KODERA
Tokyo Institute of Technology
Takahiro MORI
National Institute of Advanced Industrial Science and Technology (AIST) Tsukuba
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copiar
Shimpei NISHIYAMA, Kimihiko KATO, Yongxun LIU, Raisei MIZOKUCHI, Jun YONEDA, Tetsuo KODERA, Takahiro MORI, "Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist" in IEICE TRANSACTIONS on Electronics,
vol. E106-C, no. 10, pp. 592-596, October 2023, doi: 10.1587/transele.2022FUS0002.
Abstract: We have proposed and demonstrated a device fabrication process of physically defined quantum dots utilizing electron beam lithography employing a negative-tone resist toward high-density integration of silicon quantum bits (qubits). The electrical characterization at 3.8K exhibited so-called Coulomb diamonds, which indicates successful device operation as single-electron transistors. The proposed device fabrication process will be useful due to its high compatibility with the large-scale integration process.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2022FUS0002/_p
Copiar
@ARTICLE{e106-c_10_592,
author={Shimpei NISHIYAMA, Kimihiko KATO, Yongxun LIU, Raisei MIZOKUCHI, Jun YONEDA, Tetsuo KODERA, Takahiro MORI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist},
year={2023},
volume={E106-C},
number={10},
pages={592-596},
abstract={We have proposed and demonstrated a device fabrication process of physically defined quantum dots utilizing electron beam lithography employing a negative-tone resist toward high-density integration of silicon quantum bits (qubits). The electrical characterization at 3.8K exhibited so-called Coulomb diamonds, which indicates successful device operation as single-electron transistors. The proposed device fabrication process will be useful due to its high compatibility with the large-scale integration process.},
keywords={},
doi={10.1587/transele.2022FUS0002},
ISSN={1745-1353},
month={October},}
Copiar
TY - JOUR
TI - Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist
T2 - IEICE TRANSACTIONS on Electronics
SP - 592
EP - 596
AU - Shimpei NISHIYAMA
AU - Kimihiko KATO
AU - Yongxun LIU
AU - Raisei MIZOKUCHI
AU - Jun YONEDA
AU - Tetsuo KODERA
AU - Takahiro MORI
PY - 2023
DO - 10.1587/transele.2022FUS0002
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E106-C
IS - 10
JA - IEICE TRANSACTIONS on Electronics
Y1 - October 2023
AB - We have proposed and demonstrated a device fabrication process of physically defined quantum dots utilizing electron beam lithography employing a negative-tone resist toward high-density integration of silicon quantum bits (qubits). The electrical characterization at 3.8K exhibited so-called Coulomb diamonds, which indicates successful device operation as single-electron transistors. The proposed device fabrication process will be useful due to its high compatibility with the large-scale integration process.
ER -