The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Esta carta apresenta um amplificador sequencial modulado em carga de banda dupla (LMSA). O amplificador proposto alterou o atenuador terminado na porta de isolamento do combinador de quatro portas da arquitetura tradicional do amplificador de potência sequencial (SPA) em uma rede de modulação de reatância (RMN) para modulação de carga. A impedância pode ser mantida com resistência pura projetando RMN, obtendo assim alta eficiência e uma boa parte da potência de saída nas múltiplas bandas. Comparado ao amplificador de potência Doherty de banda dupla com uma complexa rede de modulação de carga de banda dupla (LMN), o LMSA proposto tem vantagens como manter alta eficiência de recuo de potência de saída (OBO), ampla largura de banda e construção simples. Um LMSA de banda dupla de 10 watts é simulado e medido em 1.7-1.9 GHz e 2.4-2.6 GHz com eficiências saturadas de 61.2-69.9% e 54.4-70.8%, respectivamente. A eficiência correspondente de 9dB OBO é de 46.5-57.1% e 46.4-54.4%, respectivamente.
Minghui YOU
Hangzhou Dianzi University
Guohua LIU
Hangzhou Dianzi University
Zhiqun CHENG
Hangzhou Dianzi University
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Minghui YOU, Guohua LIU, Zhiqun CHENG, "Design of a Dual-Band Load-Modulated Sequential Amplifier with Extended Back-off" in IEICE TRANSACTIONS on Electronics,
vol. E106-C, no. 12, pp. 808-811, December 2023, doi: 10.1587/transele.2023ECS6002.
Abstract: This letter presents a dual-band load-modulated sequential amplifier (LMSA). The proposed amplifier changed the attenuator terminated at the isolation port of the four-port combiner of the traditional sequential power amplifier (SPA) architecture into a reactance modulation network (RMN) for load modulation. The impedance can be maintained pure resistance by designing RMN, thus realizing high efficiency and a good portion of the output power in the multiple bands. Compared to the dual-band Doherty power amplifier with a complex dual-band load modulation network (LMN), the proposed LMSA has advantages as maintaining high output power back-off (OBO) efficiency, wide bandwidth and simple construction. A 10-watt dual-band LMSA is simulated and measured in 1.7-1.9GHz and 2.4-2.6GHz with saturated efficiencies 61.2-69.9% and 54.4-70.8%, respectively. The corresponding 9dB OBO efficiency is 46.5-57.1% and 46.4-54.4%, respectively.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2023ECS6002/_p
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@ARTICLE{e106-c_12_808,
author={Minghui YOU, Guohua LIU, Zhiqun CHENG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Design of a Dual-Band Load-Modulated Sequential Amplifier with Extended Back-off},
year={2023},
volume={E106-C},
number={12},
pages={808-811},
abstract={This letter presents a dual-band load-modulated sequential amplifier (LMSA). The proposed amplifier changed the attenuator terminated at the isolation port of the four-port combiner of the traditional sequential power amplifier (SPA) architecture into a reactance modulation network (RMN) for load modulation. The impedance can be maintained pure resistance by designing RMN, thus realizing high efficiency and a good portion of the output power in the multiple bands. Compared to the dual-band Doherty power amplifier with a complex dual-band load modulation network (LMN), the proposed LMSA has advantages as maintaining high output power back-off (OBO) efficiency, wide bandwidth and simple construction. A 10-watt dual-band LMSA is simulated and measured in 1.7-1.9GHz and 2.4-2.6GHz with saturated efficiencies 61.2-69.9% and 54.4-70.8%, respectively. The corresponding 9dB OBO efficiency is 46.5-57.1% and 46.4-54.4%, respectively.},
keywords={},
doi={10.1587/transele.2023ECS6002},
ISSN={1745-1353},
month={December},}
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TY - JOUR
TI - Design of a Dual-Band Load-Modulated Sequential Amplifier with Extended Back-off
T2 - IEICE TRANSACTIONS on Electronics
SP - 808
EP - 811
AU - Minghui YOU
AU - Guohua LIU
AU - Zhiqun CHENG
PY - 2023
DO - 10.1587/transele.2023ECS6002
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E106-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2023
AB - This letter presents a dual-band load-modulated sequential amplifier (LMSA). The proposed amplifier changed the attenuator terminated at the isolation port of the four-port combiner of the traditional sequential power amplifier (SPA) architecture into a reactance modulation network (RMN) for load modulation. The impedance can be maintained pure resistance by designing RMN, thus realizing high efficiency and a good portion of the output power in the multiple bands. Compared to the dual-band Doherty power amplifier with a complex dual-band load modulation network (LMN), the proposed LMSA has advantages as maintaining high output power back-off (OBO) efficiency, wide bandwidth and simple construction. A 10-watt dual-band LMSA is simulated and measured in 1.7-1.9GHz and 2.4-2.6GHz with saturated efficiencies 61.2-69.9% and 54.4-70.8%, respectively. The corresponding 9dB OBO efficiency is 46.5-57.1% and 46.4-54.4%, respectively.
ER -