The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
A influência da tensão da porta ou da modulação da relação de pares de bases no desempenho do λ-DNA FET foi examinada. O resultado da modulação da tensão de porta indicou que os elétrons capturados na base guanina das moléculas de λ-DNA influenciaram grandemente a Id-Vd características, e a da modulação da razão de pares de bases indicaram que a tendência da condutividade foi parcialmente esclarecida considerando a energia de ativação de buracos e elétrons e o comprimento e números das sequências seriais AT ou GC sobre as quais os buracos ou elétrons saltaram. Além disso, a influência da dimensionalidade da molécula de DNA na condutividade foi discutida teoricamente.
Naoto MATSUO
University of Hyogo
Akira HEYA
University of Hyogo
Kazushige YAMANA
University of Hyogo
Koji SUMITOMO
University of Hyogo
Tetsuo TABEI
Hiroshima University
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Naoto MATSUO, Akira HEYA, Kazushige YAMANA, Koji SUMITOMO, Tetsuo TABEI, "Influence of the Gate Voltage or the Base Pair Ratio Modulation on the λ-DNA FET Performance" in IEICE TRANSACTIONS on Electronics,
vol. E107-C, no. 3, pp. 76-79, March 2024, doi: 10.1587/transele.2023ECS6003.
Abstract: The influence of the gate voltage or base pair ratio modulation on the λ-DNA FET performance was examined. The result of the gate voltage modulation indicated that the captured electrons in the guanine base of the λ-DNA molecules greatly influenced the Id-Vd characteristics, and that of the base pair ratio modulation indicated that the tendency of the conductivity was partly clarified by considering the activation energy of holes and electrons and the length and numbers of the serial AT or GC sequences over which the holes or electrons jumped. In addition, the influence of the dimensionality of the DNA molecule on the conductivity was discussed theoretically.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.2023ECS6003/_p
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@ARTICLE{e107-c_3_76,
author={Naoto MATSUO, Akira HEYA, Kazushige YAMANA, Koji SUMITOMO, Tetsuo TABEI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Influence of the Gate Voltage or the Base Pair Ratio Modulation on the λ-DNA FET Performance},
year={2024},
volume={E107-C},
number={3},
pages={76-79},
abstract={The influence of the gate voltage or base pair ratio modulation on the λ-DNA FET performance was examined. The result of the gate voltage modulation indicated that the captured electrons in the guanine base of the λ-DNA molecules greatly influenced the Id-Vd characteristics, and that of the base pair ratio modulation indicated that the tendency of the conductivity was partly clarified by considering the activation energy of holes and electrons and the length and numbers of the serial AT or GC sequences over which the holes or electrons jumped. In addition, the influence of the dimensionality of the DNA molecule on the conductivity was discussed theoretically.},
keywords={},
doi={10.1587/transele.2023ECS6003},
ISSN={1745-1353},
month={March},}
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TY - JOUR
TI - Influence of the Gate Voltage or the Base Pair Ratio Modulation on the λ-DNA FET Performance
T2 - IEICE TRANSACTIONS on Electronics
SP - 76
EP - 79
AU - Naoto MATSUO
AU - Akira HEYA
AU - Kazushige YAMANA
AU - Koji SUMITOMO
AU - Tetsuo TABEI
PY - 2024
DO - 10.1587/transele.2023ECS6003
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E107-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2024
AB - The influence of the gate voltage or base pair ratio modulation on the λ-DNA FET performance was examined. The result of the gate voltage modulation indicated that the captured electrons in the guanine base of the λ-DNA molecules greatly influenced the Id-Vd characteristics, and that of the base pair ratio modulation indicated that the tendency of the conductivity was partly clarified by considering the activation energy of holes and electrons and the length and numbers of the serial AT or GC sequences over which the holes or electrons jumped. In addition, the influence of the dimensionality of the DNA molecule on the conductivity was discussed theoretically.
ER -