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Yasushi TAKANO, Takuya OKAMOTO, Tatsuya TAKAGI, Shunro FUKE, "Influence of PH3 Preflow Time on Initial Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 12, pp. 1443-1448, December 2009, doi: 10.1587/transele.E92.C.1443.
Abstract: Initial growth of GaP on Si substrates using metalorganic vapor phase epitaxy was studied. Si substrates were exposed to PH3 preflow for 15 s or 120 s at 830 after they were preheated at 925. Atomic force microscopy (AFM) revealed that the Si surface after preflow for 120 s was much rougher than that after preflow for 15 s. After 1.5 nm GaP deposition on the Si substrates at 830, GaP islands nucleated more uniformly on the Si substrate after preflow for 15 s than on the substrate after preflow for 120 s. After 3 nm GaP deposition, layer structures were observed on a fraction of Si surface after preflow for 15 s. Island-like structures remained on the Si surface after preflow for 120 s. After 6 nm GaP deposition, the continuity of GaP layers improved on both substrates. However, AFM shows pits that penetrated a Si substrate with preflow for 120 s. Transmission electron microscopy of a GaP layer on the Si substrate after preflow for 120 s revealed that V-shaped pits penetrated the Si substrate. The preflow for a long time roughened the Si surface, which facilitated the pit formation during GaP growth in addition to degrading the surface morphology of GaP at the initial growth stage. Even after 50 nm GaP deposition, pits with a density on the order of 107 cm-2 remained in the sample. A 50-nm-thick flat GaP surface without pits was achieved for the sample with PH3 preflow for 15 s. The PH3 short preflow is necessary to produce a flat GaP surface on a Si substrate.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.1443/_p
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@ARTICLE{e92-c_12_1443,
author={Yasushi TAKANO, Takuya OKAMOTO, Tatsuya TAKAGI, Shunro FUKE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Influence of PH3 Preflow Time on Initial Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy},
year={2009},
volume={E92-C},
number={12},
pages={1443-1448},
abstract={Initial growth of GaP on Si substrates using metalorganic vapor phase epitaxy was studied. Si substrates were exposed to PH3 preflow for 15 s or 120 s at 830 after they were preheated at 925. Atomic force microscopy (AFM) revealed that the Si surface after preflow for 120 s was much rougher than that after preflow for 15 s. After 1.5 nm GaP deposition on the Si substrates at 830, GaP islands nucleated more uniformly on the Si substrate after preflow for 15 s than on the substrate after preflow for 120 s. After 3 nm GaP deposition, layer structures were observed on a fraction of Si surface after preflow for 15 s. Island-like structures remained on the Si surface after preflow for 120 s. After 6 nm GaP deposition, the continuity of GaP layers improved on both substrates. However, AFM shows pits that penetrated a Si substrate with preflow for 120 s. Transmission electron microscopy of a GaP layer on the Si substrate after preflow for 120 s revealed that V-shaped pits penetrated the Si substrate. The preflow for a long time roughened the Si surface, which facilitated the pit formation during GaP growth in addition to degrading the surface morphology of GaP at the initial growth stage. Even after 50 nm GaP deposition, pits with a density on the order of 107 cm-2 remained in the sample. A 50-nm-thick flat GaP surface without pits was achieved for the sample with PH3 preflow for 15 s. The PH3 short preflow is necessary to produce a flat GaP surface on a Si substrate.},
keywords={},
doi={10.1587/transele.E92.C.1443},
ISSN={1745-1353},
month={December},}
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TY - JOUR
TI - Influence of PH3 Preflow Time on Initial Growth of GaP on Si Substrates by Metalorganic Vapor Phase Epitaxy
T2 - IEICE TRANSACTIONS on Electronics
SP - 1443
EP - 1448
AU - Yasushi TAKANO
AU - Takuya OKAMOTO
AU - Tatsuya TAKAGI
AU - Shunro FUKE
PY - 2009
DO - 10.1587/transele.E92.C.1443
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2009
AB - Initial growth of GaP on Si substrates using metalorganic vapor phase epitaxy was studied. Si substrates were exposed to PH3 preflow for 15 s or 120 s at 830 after they were preheated at 925. Atomic force microscopy (AFM) revealed that the Si surface after preflow for 120 s was much rougher than that after preflow for 15 s. After 1.5 nm GaP deposition on the Si substrates at 830, GaP islands nucleated more uniformly on the Si substrate after preflow for 15 s than on the substrate after preflow for 120 s. After 3 nm GaP deposition, layer structures were observed on a fraction of Si surface after preflow for 15 s. Island-like structures remained on the Si surface after preflow for 120 s. After 6 nm GaP deposition, the continuity of GaP layers improved on both substrates. However, AFM shows pits that penetrated a Si substrate with preflow for 120 s. Transmission electron microscopy of a GaP layer on the Si substrate after preflow for 120 s revealed that V-shaped pits penetrated the Si substrate. The preflow for a long time roughened the Si surface, which facilitated the pit formation during GaP growth in addition to degrading the surface morphology of GaP at the initial growth stage. Even after 50 nm GaP deposition, pits with a density on the order of 107 cm-2 remained in the sample. A 50-nm-thick flat GaP surface without pits was achieved for the sample with PH3 preflow for 15 s. The PH3 short preflow is necessary to produce a flat GaP surface on a Si substrate.
ER -