The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Capacitores MOS com óxido térmico implantado em Si e óxido depositado em CVD de 30 nm de espessura foram fabricados para aplicações de memória não volátil e dispositivos de eletroluminescência. As características de corrente-tensão (IV) e histerese IV foram medidas, e a janela de histerese (HW) e a carga integrada de HW (ICHW) extraídas dos dados de histerese foram discutidas. As características de HW de amostras com altas doses de Si mostraram curvas assimétricas de picos duplos com protuberâncias em ambas as caudas. O ICHW quase convergiu após o 4º ciclo e teve dependência da velocidade de varredura de tensão. Todas as características +ICHW e -ICHW estavam intimamente relacionadas com a estática (+I)-(+VG) e (-I)-(-VG) curvas, respectivamente. Para as amostras de alta dose de Si, as correntes claras no IV estáticoG características contribuem para diminuir o aumento da tensão e aumentar o aumento do ICHW, que corresponde à grande carga armazenada no óxido.
Toshihiro MATSUDA
Shinsuke ISHIMARU
Shingo NOHARA
Hideyuki IWATA
Kiyotaka KOMOKU
Takayuki MORISHITA
Takashi OHZONE
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Toshihiro MATSUDA, Shinsuke ISHIMARU, Shingo NOHARA, Hideyuki IWATA, Kiyotaka KOMOKU, Takayuki MORISHITA, Takashi OHZONE, "Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 12, pp. 1523-1530, December 2009, doi: 10.1587/transele.E92.C.1523.
Abstract: MOS capacitors with Si-implanted thermal oxide and CVD deposited oxide of 30 nm thickness were fabricated for applications of non-volatile memory and electroluminescence devices. Current-voltage (I-V) and I-V hysteresis characteristics were measured, and the hysteresis window (HW) and the integrated charge of HW (ICHW) extracted from the hysteresis data were discussed. The HW characteristics of high Si dose samples showed the asymmetrical double-peaks curves with the hump in both tails. The ICHW almost converged after the 4th cycle and had the voltage sweep speed dependence. All +ICHW and -ICHW characteristics were closely related to the static (+I)-(+VG) and (-I)-(-VG) curves, respectively. For the high Si dose samples, the clear hump currents in the static I-VG characteristics contribute to lower the rising voltage and to steepen the ICHW increase, which correspond to the large stored charge in the oxide.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.1523/_p
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@ARTICLE{e92-c_12_1523,
author={Toshihiro MATSUDA, Shinsuke ISHIMARU, Shingo NOHARA, Hideyuki IWATA, Kiyotaka KOMOKU, Takayuki MORISHITA, Takashi OHZONE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide},
year={2009},
volume={E92-C},
number={12},
pages={1523-1530},
abstract={MOS capacitors with Si-implanted thermal oxide and CVD deposited oxide of 30 nm thickness were fabricated for applications of non-volatile memory and electroluminescence devices. Current-voltage (I-V) and I-V hysteresis characteristics were measured, and the hysteresis window (HW) and the integrated charge of HW (ICHW) extracted from the hysteresis data were discussed. The HW characteristics of high Si dose samples showed the asymmetrical double-peaks curves with the hump in both tails. The ICHW almost converged after the 4th cycle and had the voltage sweep speed dependence. All +ICHW and -ICHW characteristics were closely related to the static (+I)-(+VG) and (-I)-(-VG) curves, respectively. For the high Si dose samples, the clear hump currents in the static I-VG characteristics contribute to lower the rising voltage and to steepen the ICHW increase, which correspond to the large stored charge in the oxide.},
keywords={},
doi={10.1587/transele.E92.C.1523},
ISSN={1745-1353},
month={December},}
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TY - JOUR
TI - Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide
T2 - IEICE TRANSACTIONS on Electronics
SP - 1523
EP - 1530
AU - Toshihiro MATSUDA
AU - Shinsuke ISHIMARU
AU - Shingo NOHARA
AU - Hideyuki IWATA
AU - Kiyotaka KOMOKU
AU - Takayuki MORISHITA
AU - Takashi OHZONE
PY - 2009
DO - 10.1587/transele.E92.C.1523
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2009
AB - MOS capacitors with Si-implanted thermal oxide and CVD deposited oxide of 30 nm thickness were fabricated for applications of non-volatile memory and electroluminescence devices. Current-voltage (I-V) and I-V hysteresis characteristics were measured, and the hysteresis window (HW) and the integrated charge of HW (ICHW) extracted from the hysteresis data were discussed. The HW characteristics of high Si dose samples showed the asymmetrical double-peaks curves with the hump in both tails. The ICHW almost converged after the 4th cycle and had the voltage sweep speed dependence. All +ICHW and -ICHW characteristics were closely related to the static (+I)-(+VG) and (-I)-(-VG) curves, respectively. For the high Si dose samples, the clear hump currents in the static I-VG characteristics contribute to lower the rising voltage and to steepen the ICHW increase, which correspond to the large stored charge in the oxide.
ER -