The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Exibições de texto completo
75
Propusemos e demonstramos com sucesso um método de duas etapas para localizar defeitos em um chip LSI. A primeira etapa é igual à imagem convencional do SQUID a laser (L-SQUID), onde um SQUID e um feixe de laser são fixados durante a digitalização do chip LSI. A segunda etapa é uma nova imagem L-SQUID onde um feixe de laser permanece no ponto, localizado nos resultados da primeira etapa, durante a digitalização do SQUID. Na segunda etapa, um tamanho SQUID (Aef) e a distância entre o SQUID e o chip LSI (ΔZ) são fatores-chave que limitam a resolução espacial. Para melhorar a resolução espacial, desenvolvemos um micro-SQUID e a câmara de vácuo que abriga tanto o micro-SQUID quanto o chip LSI. O Aef do micro-SQUID é mil do de um SQUID convencional. O valor mínimo de ΔZ foi reduzido com sucesso para 25 µm colocando o micro-SQUID e um chip LSI na mesma câmara de vácuo. A resolução espacial na segunda etapa foi de 53 µm. A demonstração da localização real de defeitos complicados foi bem-sucedida e este resultado sugere que o método de localização em duas etapas é útil para análise de falhas LSI.
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Kiyoshi NIKAWA, Shouji INOUE, Tatsuoki NAGAISHI, Toru MATSUMOTO, Katsuyoshi MIURA, Koji NAKAMAE, "New Approach of Laser-SQUID Microscopy to LSI Failure Analysis" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 3, pp. 327-333, March 2009, doi: 10.1587/transele.E92.C.327.
Abstract: We have proposed and successfully demonstrated a two step method for localizing defects on an LSI chip. The first step is the same as a conventional laser-SQUID (L-SQUID) imaging where a SQUID and a laser beam are fixed during LSI chip scanning. The second step is a new L-SQUID imaging where a laser beam is stayed at the point, located in the first step results, during SQUID scanning. In the second step, a SQUID size (Aeff) and the distance between the SQUID and the LSI chip (ΔZ) are key factors limiting spatial resolution. In order to improve the spatial resolution, we have developed a micro-SQUID and the vacuum chamber housing both the micro-SQUID and the LSI chip. The Aeff of the micro-SQUID is a thousand of that of a conventional SQUID. The minimum value of ΔZ was successfully reduced to 25 µm by setting both the micro-SQUID and an LSI chip in the same vacuum chamber. The spatial resolution in the second step was shown to be 53 µm. Demonstration of actual complicated defects localization was succeeded, and this result suggests that the two step localization method is useful for LSI failure analysis.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.327/_p
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@ARTICLE{e92-c_3_327,
author={Kiyoshi NIKAWA, Shouji INOUE, Tatsuoki NAGAISHI, Toru MATSUMOTO, Katsuyoshi MIURA, Koji NAKAMAE, },
journal={IEICE TRANSACTIONS on Electronics},
title={New Approach of Laser-SQUID Microscopy to LSI Failure Analysis},
year={2009},
volume={E92-C},
number={3},
pages={327-333},
abstract={We have proposed and successfully demonstrated a two step method for localizing defects on an LSI chip. The first step is the same as a conventional laser-SQUID (L-SQUID) imaging where a SQUID and a laser beam are fixed during LSI chip scanning. The second step is a new L-SQUID imaging where a laser beam is stayed at the point, located in the first step results, during SQUID scanning. In the second step, a SQUID size (Aeff) and the distance between the SQUID and the LSI chip (ΔZ) are key factors limiting spatial resolution. In order to improve the spatial resolution, we have developed a micro-SQUID and the vacuum chamber housing both the micro-SQUID and the LSI chip. The Aeff of the micro-SQUID is a thousand of that of a conventional SQUID. The minimum value of ΔZ was successfully reduced to 25 µm by setting both the micro-SQUID and an LSI chip in the same vacuum chamber. The spatial resolution in the second step was shown to be 53 µm. Demonstration of actual complicated defects localization was succeeded, and this result suggests that the two step localization method is useful for LSI failure analysis.},
keywords={},
doi={10.1587/transele.E92.C.327},
ISSN={1745-1353},
month={March},}
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TY - JOUR
TI - New Approach of Laser-SQUID Microscopy to LSI Failure Analysis
T2 - IEICE TRANSACTIONS on Electronics
SP - 327
EP - 333
AU - Kiyoshi NIKAWA
AU - Shouji INOUE
AU - Tatsuoki NAGAISHI
AU - Toru MATSUMOTO
AU - Katsuyoshi MIURA
AU - Koji NAKAMAE
PY - 2009
DO - 10.1587/transele.E92.C.327
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 3
JA - IEICE TRANSACTIONS on Electronics
Y1 - March 2009
AB - We have proposed and successfully demonstrated a two step method for localizing defects on an LSI chip. The first step is the same as a conventional laser-SQUID (L-SQUID) imaging where a SQUID and a laser beam are fixed during LSI chip scanning. The second step is a new L-SQUID imaging where a laser beam is stayed at the point, located in the first step results, during SQUID scanning. In the second step, a SQUID size (Aeff) and the distance between the SQUID and the LSI chip (ΔZ) are key factors limiting spatial resolution. In order to improve the spatial resolution, we have developed a micro-SQUID and the vacuum chamber housing both the micro-SQUID and the LSI chip. The Aeff of the micro-SQUID is a thousand of that of a conventional SQUID. The minimum value of ΔZ was successfully reduced to 25 µm by setting both the micro-SQUID and an LSI chip in the same vacuum chamber. The spatial resolution in the second step was shown to be 53 µm. Demonstration of actual complicated defects localization was succeeded, and this result suggests that the two step localization method is useful for LSI failure analysis.
ER -