The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Foi desenvolvida uma tecnologia de análise de dados de microscopia de força atômica para superfícies de silício atomicamente planas. Superfícies de silício atomicamente planas compostas de terraços atômicos e degraus são obtidas em wafers de orientação (100) de 200 mm de diâmetro por recozimento em ambiente de argônio puro a 1,200
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Masahiro KONDA, Akinobu TERAMOTO, Tomoyuki SUWA, Rihito KURODA, Tadahiro OHMI, "Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 5, pp. 664-670, May 2009, doi: 10.1587/transele.E92.C.664.
Abstract: A data analysis technology of atomic force microscopy for atomically flat silicon surfaces has been developed. Atomically flat silicon surfaces composed of atomic terraces and steps are obtained on (100) orientation 200 mm diameter wafers by annealing in pure argon ambience at 1,200
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.664/_p
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@ARTICLE{e92-c_5_664,
author={Masahiro KONDA, Akinobu TERAMOTO, Tomoyuki SUWA, Rihito KURODA, Tadahiro OHMI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces},
year={2009},
volume={E92-C},
number={5},
pages={664-670},
abstract={A data analysis technology of atomic force microscopy for atomically flat silicon surfaces has been developed. Atomically flat silicon surfaces composed of atomic terraces and steps are obtained on (100) orientation 200 mm diameter wafers by annealing in pure argon ambience at 1,200
keywords={},
doi={10.1587/transele.E92.C.664},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces
T2 - IEICE TRANSACTIONS on Electronics
SP - 664
EP - 670
AU - Masahiro KONDA
AU - Akinobu TERAMOTO
AU - Tomoyuki SUWA
AU - Rihito KURODA
AU - Tadahiro OHMI
PY - 2009
DO - 10.1587/transele.E92.C.664
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2009
AB - A data analysis technology of atomic force microscopy for atomically flat silicon surfaces has been developed. Atomically flat silicon surfaces composed of atomic terraces and steps are obtained on (100) orientation 200 mm diameter wafers by annealing in pure argon ambience at 1,200
ER -