The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Neste artigo, é apresentado um novo circuito de fonte de corrente de referência com multiplicador beta de 800 mV. Para lidar com a estreita faixa de modo comum de entrada do Opamp no circuito de referência, o divisor de tensão resistivo foi empregado. O Opamp de alto ganho foi projetado para compensar a baixa resistência intrínseca de saída dos transistores MOS. O circuito de referência proposto foi projetado em um processo CMOS padrão de 0.18 µm com valor nominal Vth de 420 mV e -450 mV para transistor n-MOS e p-MOS, respectivamente. O consumo total de energia incluindo Opamp é inferior a 50 µW.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copiar
Oh Jun KWON, Kae Dal KWACK, "A Novel 800 mV Reference Current Source Circuit for Low-Power Low-Voltage Mixed-Mode Systems" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 5, pp. 676-680, May 2009, doi: 10.1587/transele.E92.C.676.
Abstract: In this paper, a novel 800 mV beta-multiplier reference current source circuit is presented. In order to cope with the narrow input common-mode range of the Opamp in the reference circuit, the resistive voltage divider was employed. High gain Opamp was designed to compensate for the intrinsic low output resistance of the MOS transistors. The proposed reference circuit was designed in a standard 0.18 µm CMOS process with nominal Vth of 420 mV and -450 mV for n-MOS and p-MOS transistor, respectively. The total power consumption including Opamp is less than 50 µW.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.676/_p
Copiar
@ARTICLE{e92-c_5_676,
author={Oh Jun KWON, Kae Dal KWACK, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Novel 800 mV Reference Current Source Circuit for Low-Power Low-Voltage Mixed-Mode Systems},
year={2009},
volume={E92-C},
number={5},
pages={676-680},
abstract={In this paper, a novel 800 mV beta-multiplier reference current source circuit is presented. In order to cope with the narrow input common-mode range of the Opamp in the reference circuit, the resistive voltage divider was employed. High gain Opamp was designed to compensate for the intrinsic low output resistance of the MOS transistors. The proposed reference circuit was designed in a standard 0.18 µm CMOS process with nominal Vth of 420 mV and -450 mV for n-MOS and p-MOS transistor, respectively. The total power consumption including Opamp is less than 50 µW.},
keywords={},
doi={10.1587/transele.E92.C.676},
ISSN={1745-1353},
month={May},}
Copiar
TY - JOUR
TI - A Novel 800 mV Reference Current Source Circuit for Low-Power Low-Voltage Mixed-Mode Systems
T2 - IEICE TRANSACTIONS on Electronics
SP - 676
EP - 680
AU - Oh Jun KWON
AU - Kae Dal KWACK
PY - 2009
DO - 10.1587/transele.E92.C.676
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2009
AB - In this paper, a novel 800 mV beta-multiplier reference current source circuit is presented. In order to cope with the narrow input common-mode range of the Opamp in the reference circuit, the resistive voltage divider was employed. High gain Opamp was designed to compensate for the intrinsic low output resistance of the MOS transistors. The proposed reference circuit was designed in a standard 0.18 µm CMOS process with nominal Vth of 420 mV and -450 mV for n-MOS and p-MOS transistor, respectively. The total power consumption including Opamp is less than 50 µW.
ER -