The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
O fenômeno do colapso atual é um obstáculo bem conhecido nos HEMTs AlGaN/GaN. A fim de melhorar a estabilidade superficial dos HEMTs, investigamos o filme de passivação SiN depositado por T-CVD e descobrimos que ele melhora tanto a corrente de fuga da porta quanto o fenômeno de colapso de corrente [1]. Além disso, comparamos os filmes de passivação T-CVD e PE-CVD, em características de alto campo elétrico DC e RF. Descobrimos que o filme de passivação T-CVD SiN melhora BVds-WOW! em 30% devido à redução da corrente de fuga da porta. Também melhorou ηd nas características de potência de saída por medição load-pull, o que indica a diminuição do fenômeno de colapso de corrente. Também fabricamos um HEMT AlGaN/GaN de classe 50 W com vários dedos com filme de passivação SiN T-CVD e alcançamos 61.2% de alta eficiência de drenagem na frequência de 2.14 GHz, que foi 3.6 pontos maior do que com filme de passivação SiN PE-CVD .
Hideyuki OKITA
Toshiharu MARUI
Shinichi HOSHI
Masanori ITOH
Fumihiko TODA
Yoshiaki MORINO
Isao TAMAI
Yoshiaki SANO
Shohei SEKI
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Hideyuki OKITA, Toshiharu MARUI, Shinichi HOSHI, Masanori ITOH, Fumihiko TODA, Yoshiaki MORINO, Isao TAMAI, Yoshiaki SANO, Shohei SEKI, "Comparisons of SiN Passivation Film Deposited by PE-CVD and T-CVD Method for AlGaN/GaN HEMTs on SiC Substrate" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 5, pp. 686-690, May 2009, doi: 10.1587/transele.E92.C.686.
Abstract: Current collapse phenomenon is a well known obstacle in the AlGaN/GaN HEMTs. In order to improve the surface stability of HEMTs, we have investigated the SiN passivation film deposited by T-CVD, and we found that it improves both gate leakage current and current collapse phenomenon [1]. Moreover, we compared the T-CVD and PE-CVD passivation films, on high electric field DC and RF characteristics. We found that T-CVD SiN passivation film improves BVds-off by 30% because of the reduction of gate leakage current. It also improved ηd in the output power characteristics by load-pull measurement, which indicates the decrease of the current collapse phenomenon. Also we fabricated a multi-fingered 50 W-class AlGaN/GaN HEMT with T-CVD SiN passivation film and achieved 61.2% of high drain efficiency at frequency of 2.14 GHz, which was 3.6 points higher than that with PE-CVD SiN passivation film.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.686/_p
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@ARTICLE{e92-c_5_686,
author={Hideyuki OKITA, Toshiharu MARUI, Shinichi HOSHI, Masanori ITOH, Fumihiko TODA, Yoshiaki MORINO, Isao TAMAI, Yoshiaki SANO, Shohei SEKI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Comparisons of SiN Passivation Film Deposited by PE-CVD and T-CVD Method for AlGaN/GaN HEMTs on SiC Substrate},
year={2009},
volume={E92-C},
number={5},
pages={686-690},
abstract={Current collapse phenomenon is a well known obstacle in the AlGaN/GaN HEMTs. In order to improve the surface stability of HEMTs, we have investigated the SiN passivation film deposited by T-CVD, and we found that it improves both gate leakage current and current collapse phenomenon [1]. Moreover, we compared the T-CVD and PE-CVD passivation films, on high electric field DC and RF characteristics. We found that T-CVD SiN passivation film improves BVds-off by 30% because of the reduction of gate leakage current. It also improved ηd in the output power characteristics by load-pull measurement, which indicates the decrease of the current collapse phenomenon. Also we fabricated a multi-fingered 50 W-class AlGaN/GaN HEMT with T-CVD SiN passivation film and achieved 61.2% of high drain efficiency at frequency of 2.14 GHz, which was 3.6 points higher than that with PE-CVD SiN passivation film.},
keywords={},
doi={10.1587/transele.E92.C.686},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Comparisons of SiN Passivation Film Deposited by PE-CVD and T-CVD Method for AlGaN/GaN HEMTs on SiC Substrate
T2 - IEICE TRANSACTIONS on Electronics
SP - 686
EP - 690
AU - Hideyuki OKITA
AU - Toshiharu MARUI
AU - Shinichi HOSHI
AU - Masanori ITOH
AU - Fumihiko TODA
AU - Yoshiaki MORINO
AU - Isao TAMAI
AU - Yoshiaki SANO
AU - Shohei SEKI
PY - 2009
DO - 10.1587/transele.E92.C.686
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2009
AB - Current collapse phenomenon is a well known obstacle in the AlGaN/GaN HEMTs. In order to improve the surface stability of HEMTs, we have investigated the SiN passivation film deposited by T-CVD, and we found that it improves both gate leakage current and current collapse phenomenon [1]. Moreover, we compared the T-CVD and PE-CVD passivation films, on high electric field DC and RF characteristics. We found that T-CVD SiN passivation film improves BVds-off by 30% because of the reduction of gate leakage current. It also improved ηd in the output power characteristics by load-pull measurement, which indicates the decrease of the current collapse phenomenon. Also we fabricated a multi-fingered 50 W-class AlGaN/GaN HEMT with T-CVD SiN passivation film and achieved 61.2% of high drain efficiency at frequency of 2.14 GHz, which was 3.6 points higher than that with PE-CVD SiN passivation film.
ER -