The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Avaliamos a resistividade de contato de tunelamento com base no cálculo numérico da densidade de corrente de tunelamento através de uma camada de barreira de AlGaN em heteroestruturas não polares de AlGaN / GaN. A fim de reduzir a resistividade de contato do tunelamento, introduzimos um n+-AoXGa1 - XN camada entre um n +-Camada de cobertura GaN e uma camada de barreira i-AlGaN. A resistividade de contato do tunelamento foi otimizada variando a composição de Al e a concentração do doador em n+-AoXGa1-XN. Os resultados da simulação mostram que a resistividade de contato de tunelamento pode ser melhorada em até 4 ordens de grandeza, em comparação com a heteroestrutura AlGaN/GaN padrão.
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Hironari CHIKAOKA, Yoichi TAKAKUWA, Kenji SHIOJIMA, Masaaki KUZUHARA, "Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 5, pp. 691-695, May 2009, doi: 10.1587/transele.E92.C.691.
Abstract: We have evaluated the tunneling contact resistivity based on numerical calculation of tunneling current density across an AlGaN barrier layer in non-polar AlGaN/GaN heterostructures. In order to reduce the tunneling contact resistivity, we have introduced an n+-AlXGa1 - XN layer between an n +-GaN cap layer and an i-AlGaN barrier layer. The tunneling contact resistivity has been optimized by varying Al composition and donor concentration in n+-AlXGa1-XN. Simulation results show that the tunneling contact resistivity can be improved by as large as 4 orders of magnitude, compared to the standard AlGaN/GaN heterostructure.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.691/_p
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@ARTICLE{e92-c_5_691,
author={Hironari CHIKAOKA, Yoichi TAKAKUWA, Kenji SHIOJIMA, Masaaki KUZUHARA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures},
year={2009},
volume={E92-C},
number={5},
pages={691-695},
abstract={We have evaluated the tunneling contact resistivity based on numerical calculation of tunneling current density across an AlGaN barrier layer in non-polar AlGaN/GaN heterostructures. In order to reduce the tunneling contact resistivity, we have introduced an n+-AlXGa1 - XN layer between an n +-GaN cap layer and an i-AlGaN barrier layer. The tunneling contact resistivity has been optimized by varying Al composition and donor concentration in n+-AlXGa1-XN. Simulation results show that the tunneling contact resistivity can be improved by as large as 4 orders of magnitude, compared to the standard AlGaN/GaN heterostructure.},
keywords={},
doi={10.1587/transele.E92.C.691},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures
T2 - IEICE TRANSACTIONS on Electronics
SP - 691
EP - 695
AU - Hironari CHIKAOKA
AU - Yoichi TAKAKUWA
AU - Kenji SHIOJIMA
AU - Masaaki KUZUHARA
PY - 2009
DO - 10.1587/transele.E92.C.691
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2009
AB - We have evaluated the tunneling contact resistivity based on numerical calculation of tunneling current density across an AlGaN barrier layer in non-polar AlGaN/GaN heterostructures. In order to reduce the tunneling contact resistivity, we have introduced an n+-AlXGa1 - XN layer between an n +-GaN cap layer and an i-AlGaN barrier layer. The tunneling contact resistivity has been optimized by varying Al composition and donor concentration in n+-AlXGa1-XN. Simulation results show that the tunneling contact resistivity can be improved by as large as 4 orders of magnitude, compared to the standard AlGaN/GaN heterostructure.
ER -