The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Propusemos um emissor terahertz (THz) utilizando plasmons bidimensionais (2DPs) em um transistor de alta mobilidade eletrônica (HEMT) de super-rede de porta dupla (SGG). O plasmon sob cada porta de grade tem uma característica única: sua frequência de ressonância é determinada pela velocidade da onda de plasma ao longo do comprimento da porta. Como a tensão de polarização do dreno causa uma inclinação linear do potencial da fonte para a área de drenagem, as densidades eletrônicas da folha em cavidades 2DP distribuídas periodicamente são dispersas. Como resultado, todas as frequências ressonantes são dispersas e ocorre um alargamento espectral indesejável. Uma estrutura SGG pode compensar a distribuição da densidade eletrônica da folha modulando a dimensão da rede. A simulação no domínio do tempo de diferenças finitas confirma seu efeito de estreitamento espectral. Dentro de uma ampla faixa de dessintonização para as tensões de polarização de gate e dreno, proporcionando uma mudança de frequência de
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Takuya NISHIMURA, Nobuhiro MAGOME, HyunChul KANG, Taiichi OTSUJI, "Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 5, pp. 696-701, May 2009, doi: 10.1587/transele.E92.C.696.
Abstract: We have proposed a terahertz (THz) emitter utilizing two-dimensional plasmons (2DPs) in a super-grating dual-gate (SGG) high electron mobility transistor (HEMT). The plasmon under each grating gate has a unique feature that its resonant frequency is determined by the plasma-wave velocity over the gate length. Since the drain bias voltage causes a linear potential slope from the source to drain area, the sheet electron densities in periodically distributed 2DP cavities are dispersed. As a result, all the resonant frequencies are dispersed and undesirable spectral broadening occurs. A SGG structure can compensate for the sheet electron density distribution by modulating the grating dimension. The finite difference time domain simulation confirms its spectral narrowing effect. Within a wide detuning range for the gate and drain bias voltages giving a frequency shifting of
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.696/_p
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@ARTICLE{e92-c_5_696,
author={Takuya NISHIMURA, Nobuhiro MAGOME, HyunChul KANG, Taiichi OTSUJI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter},
year={2009},
volume={E92-C},
number={5},
pages={696-701},
abstract={We have proposed a terahertz (THz) emitter utilizing two-dimensional plasmons (2DPs) in a super-grating dual-gate (SGG) high electron mobility transistor (HEMT). The plasmon under each grating gate has a unique feature that its resonant frequency is determined by the plasma-wave velocity over the gate length. Since the drain bias voltage causes a linear potential slope from the source to drain area, the sheet electron densities in periodically distributed 2DP cavities are dispersed. As a result, all the resonant frequencies are dispersed and undesirable spectral broadening occurs. A SGG structure can compensate for the sheet electron density distribution by modulating the grating dimension. The finite difference time domain simulation confirms its spectral narrowing effect. Within a wide detuning range for the gate and drain bias voltages giving a frequency shifting of
keywords={},
doi={10.1587/transele.E92.C.696},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter
T2 - IEICE TRANSACTIONS on Electronics
SP - 696
EP - 701
AU - Takuya NISHIMURA
AU - Nobuhiro MAGOME
AU - HyunChul KANG
AU - Taiichi OTSUJI
PY - 2009
DO - 10.1587/transele.E92.C.696
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2009
AB - We have proposed a terahertz (THz) emitter utilizing two-dimensional plasmons (2DPs) in a super-grating dual-gate (SGG) high electron mobility transistor (HEMT). The plasmon under each grating gate has a unique feature that its resonant frequency is determined by the plasma-wave velocity over the gate length. Since the drain bias voltage causes a linear potential slope from the source to drain area, the sheet electron densities in periodically distributed 2DP cavities are dispersed. As a result, all the resonant frequencies are dispersed and undesirable spectral broadening occurs. A SGG structure can compensate for the sheet electron density distribution by modulating the grating dimension. The finite difference time domain simulation confirms its spectral narrowing effect. Within a wide detuning range for the gate and drain bias voltages giving a frequency shifting of
ER -