The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Um novo circuito integrado de leitura é desenvolvido para aplicação em um conjunto de microbolômetros à base de silício amorfo com densidade de pixel de 35 µm. O circuito proposto reduz a dissipação de energia para um conversor analógico-digital (ADC) em nível de pixel, que utiliza um comparador e um contador para sua conversão de dados. A corrente infravermelha de um microbolômetro é proporcional às alterações de resistividade do microbolômetro. Assim, o número necessário de operações de contador para o pixel ADC pode ser determinado de acordo com a variação da corrente do microbolômetro. O número de contagem determina com precisão quanto fluxo infravermelho é absorvido. Normalmente, um contador de 14 bits deve ser usado para o pixel ADC para esse tipo de operação. Porém, quando o esquema de skimming atual proposto é adotado, o total de bits para o contador no pixel ADC pode ser reduzido para 12 bits. Devido ao mecanismo proposto, a velocidade operacional necessária do comparador pode ser inferior à de um circuito convencional. Consequentemente, a dissipação global de energia no comparador e contador é menor do que a de uma estrutura convencional. Esta abordagem de baixo consumo de energia é muito adequada nos ADCs de nível de pixel de microbolômetros.
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Dong-Heon HA, Chi Ho HWANG, Yong Soo LEE, Hee Chul LEE, "Low Power Pixel-Level ADC Readout Circuit for an Amorphous Silicon-Based Microbolometer" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 5, pp. 708-712, May 2009, doi: 10.1587/transele.E92.C.708.
Abstract: A new readout integrated circuit is developed for application in an amorphous silicon-based microbolometer array with a pixel pitch of 35 µm. The proposed circuit lowers the power dissipation for a pixel-level analog-to-digital converter (ADC), which uses a comparator and a counter for its data conversion. The infrared current of a microbolometer is proportional to the resistivity changes of the microbolometer. Thus, the required number of counter operations for the pixel ADC can be determined according to the microbolometer current variation. The counting number precisely determines how much infrared flux is absorbed. A 14 bit counter should normally be used for the pixel ADC for this kind of operation. However, when the proposed current skimming scheme is adopted, the total bits for the counter in the pixel ADC can be reduced to 12 bits. Due to the proposed mechanism, the required operational speed of the comparator can lower than that of a conventional circuit. Consequently, the overall power dissipation in the comparator and counter is less than that of a conventional structure. This low power approach is very suitable in the pixel-level ADCs of microbolometers.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.708/_p
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@ARTICLE{e92-c_5_708,
author={Dong-Heon HA, Chi Ho HWANG, Yong Soo LEE, Hee Chul LEE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Low Power Pixel-Level ADC Readout Circuit for an Amorphous Silicon-Based Microbolometer},
year={2009},
volume={E92-C},
number={5},
pages={708-712},
abstract={A new readout integrated circuit is developed for application in an amorphous silicon-based microbolometer array with a pixel pitch of 35 µm. The proposed circuit lowers the power dissipation for a pixel-level analog-to-digital converter (ADC), which uses a comparator and a counter for its data conversion. The infrared current of a microbolometer is proportional to the resistivity changes of the microbolometer. Thus, the required number of counter operations for the pixel ADC can be determined according to the microbolometer current variation. The counting number precisely determines how much infrared flux is absorbed. A 14 bit counter should normally be used for the pixel ADC for this kind of operation. However, when the proposed current skimming scheme is adopted, the total bits for the counter in the pixel ADC can be reduced to 12 bits. Due to the proposed mechanism, the required operational speed of the comparator can lower than that of a conventional circuit. Consequently, the overall power dissipation in the comparator and counter is less than that of a conventional structure. This low power approach is very suitable in the pixel-level ADCs of microbolometers.},
keywords={},
doi={10.1587/transele.E92.C.708},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Low Power Pixel-Level ADC Readout Circuit for an Amorphous Silicon-Based Microbolometer
T2 - IEICE TRANSACTIONS on Electronics
SP - 708
EP - 712
AU - Dong-Heon HA
AU - Chi Ho HWANG
AU - Yong Soo LEE
AU - Hee Chul LEE
PY - 2009
DO - 10.1587/transele.E92.C.708
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2009
AB - A new readout integrated circuit is developed for application in an amorphous silicon-based microbolometer array with a pixel pitch of 35 µm. The proposed circuit lowers the power dissipation for a pixel-level analog-to-digital converter (ADC), which uses a comparator and a counter for its data conversion. The infrared current of a microbolometer is proportional to the resistivity changes of the microbolometer. Thus, the required number of counter operations for the pixel ADC can be determined according to the microbolometer current variation. The counting number precisely determines how much infrared flux is absorbed. A 14 bit counter should normally be used for the pixel ADC for this kind of operation. However, when the proposed current skimming scheme is adopted, the total bits for the counter in the pixel ADC can be reduced to 12 bits. Due to the proposed mechanism, the required operational speed of the comparator can lower than that of a conventional circuit. Consequently, the overall power dissipation in the comparator and counter is less than that of a conventional structure. This low power approach is very suitable in the pixel-level ADCs of microbolometers.
ER -