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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
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Este artigo descreve os recentes avanços em fotodiodos semicondutores para uso em sistemas ópticos de ultra-alta velocidade. Desenvolvemos dois tipos de fotodiodos de guia de ondas (WG-PD) - um fotodiodo de guia de ondas acoplado evanescentemente (EC-WG-PD) e um fotodiodo de avalanche de guia de ondas de absorção e multiplicação separada (WG-APD). O EC-WG-PD é muito robusto sob operação de alta entrada óptica devido à sua distribuição de densidade de fotocorrente ao longo da propagação da luz. O EC-WG-PD exibiu simultaneamente uma alta eficiência quântica externa de 70% para 1310 e 1550 nm e uma ampla largura de banda de mais de 40 GHz. O WG-APD, por outro lado, possui uma ampla largura de banda de 36.5 GHz e um produto ganho-largura de banda de 170 GHz como resultado de sua pequena estrutura mesa de guia de ondas e uma fina camada de multiplicação. Foi alcançada uma sensibilidade recorde do receptor de -19.6 dBm a 40 Gbps. Além disso, foi desenvolvido um EC-WG-PD duplo monoliticamente integrado para sistemas de chaveamento de mudança de fase diferencial (DPSK). Cada PD possui características equivalentes com largura de banda de 3 dB abaixo de mais de 40 GHz e eficiência quântica externa de 70% a 1550 nm.
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Kikuo MAKITA, Kazuhiro SHIBA, Takeshi NAKATA, Emiko MIZUKI, Sawaki WATANABE, "Recent Advances in Ultra-High-Speed Waveguide Photodiodes for Optical Communication Systems" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 7, pp. 922-928, July 2009, doi: 10.1587/transele.E92.C.922.
Abstract: This paper describes the recent advances in semiconductor photodiodes for use in ultra-high-speed optical systems. We developed two types of waveguide photodiodes (WG-PD) -- an evanescently coupled waveguide photodiode (EC-WG-PD) and a separated-absorption-and-multiplication waveguide avalanche photodiode (WG-APD). The EC-WG-PD is very robust under high optical input operation because of its distribution of photo current density along the light propagation. The EC-WG-PD simultaneously exhibited a high external quantum efficiency of 70% for both 1310 and 1550 nm, and a wide bandwidth of more than 40 GHz. The WG-APD, on the other hand, has a wide bandwidth of 36.5 GHz and a gain-bandwidth product of 170 GHz as a result of its small waveguide mesa structure and a thin multiplication layer. Record high receiver sensitivity of -19.6 dBm at 40 Gbps was achieved. Additionally, a monolithically integrated dual EC-WG-PD for differential phase shift-keying (DPSK) systems was developed. Each PD has equivalent characteristics with 3-dB-down bandwidth of more than 40 GHz and external quantum efficiency of 70% at 1550 nm.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.922/_p
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@ARTICLE{e92-c_7_922,
author={Kikuo MAKITA, Kazuhiro SHIBA, Takeshi NAKATA, Emiko MIZUKI, Sawaki WATANABE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Recent Advances in Ultra-High-Speed Waveguide Photodiodes for Optical Communication Systems},
year={2009},
volume={E92-C},
number={7},
pages={922-928},
abstract={This paper describes the recent advances in semiconductor photodiodes for use in ultra-high-speed optical systems. We developed two types of waveguide photodiodes (WG-PD) -- an evanescently coupled waveguide photodiode (EC-WG-PD) and a separated-absorption-and-multiplication waveguide avalanche photodiode (WG-APD). The EC-WG-PD is very robust under high optical input operation because of its distribution of photo current density along the light propagation. The EC-WG-PD simultaneously exhibited a high external quantum efficiency of 70% for both 1310 and 1550 nm, and a wide bandwidth of more than 40 GHz. The WG-APD, on the other hand, has a wide bandwidth of 36.5 GHz and a gain-bandwidth product of 170 GHz as a result of its small waveguide mesa structure and a thin multiplication layer. Record high receiver sensitivity of -19.6 dBm at 40 Gbps was achieved. Additionally, a monolithically integrated dual EC-WG-PD for differential phase shift-keying (DPSK) systems was developed. Each PD has equivalent characteristics with 3-dB-down bandwidth of more than 40 GHz and external quantum efficiency of 70% at 1550 nm.},
keywords={},
doi={10.1587/transele.E92.C.922},
ISSN={1745-1353},
month={July},}
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TY - JOUR
TI - Recent Advances in Ultra-High-Speed Waveguide Photodiodes for Optical Communication Systems
T2 - IEICE TRANSACTIONS on Electronics
SP - 922
EP - 928
AU - Kikuo MAKITA
AU - Kazuhiro SHIBA
AU - Takeshi NAKATA
AU - Emiko MIZUKI
AU - Sawaki WATANABE
PY - 2009
DO - 10.1587/transele.E92.C.922
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2009
AB - This paper describes the recent advances in semiconductor photodiodes for use in ultra-high-speed optical systems. We developed two types of waveguide photodiodes (WG-PD) -- an evanescently coupled waveguide photodiode (EC-WG-PD) and a separated-absorption-and-multiplication waveguide avalanche photodiode (WG-APD). The EC-WG-PD is very robust under high optical input operation because of its distribution of photo current density along the light propagation. The EC-WG-PD simultaneously exhibited a high external quantum efficiency of 70% for both 1310 and 1550 nm, and a wide bandwidth of more than 40 GHz. The WG-APD, on the other hand, has a wide bandwidth of 36.5 GHz and a gain-bandwidth product of 170 GHz as a result of its small waveguide mesa structure and a thin multiplication layer. Record high receiver sensitivity of -19.6 dBm at 40 Gbps was achieved. Additionally, a monolithically integrated dual EC-WG-PD for differential phase shift-keying (DPSK) systems was developed. Each PD has equivalent characteristics with 3-dB-down bandwidth of more than 40 GHz and external quantum efficiency of 70% at 1550 nm.
ER -