The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
A memória buffer óptica para sinal de dados de 10 Gb/s é demonstrada experimentalmente usando um laser emissor de superfície de cavidade vertical biestável de polarização (VCSEL). A memória buffer óptica é baseada em uma função de porta AND óptica e na biestabilidade de polarização do VCSEL. A operação rápida da porta AND, que responde a pulsos ópticos de 50 ps de largura, é alcançada experimentalmente aumentando a frequência de desafinação entre uma luz de injeção no VCSEL e uma luz de laser do VCSEL. Um bit especificado é extraído do sinal de dados de 10 Gb/s pela operação rápida da porta AND e é armazenado como o estado de polarização do VCSEL pela biestabilidade de polarização. As simulações numéricas correspondentes também são realizadas usando equações de taxa de dois modos, levando em consideração a frequência de dessintonização. Os resultados da simulação confirmam a operação rápida da porta AND, aumentando a frequência de desafinação, bem como os resultados experimentais.
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Takashi MORI, Yuuki SATO, Hitoshi KAWAGUCHI, "10-Gb/s Optical Buffer Memory Using a Polarization Bistable VCSEL" in IEICE TRANSACTIONS on Electronics,
vol. E92-C, no. 7, pp. 957-963, July 2009, doi: 10.1587/transele.E92.C.957.
Abstract: Optical buffer memory for 10-Gb/s data signal is demonstrated experimentally using a polarization bistable vertical-cavity surface-emitting laser (VCSEL). The optical buffer memory is based on an optical AND gate function and the polarization bistability of the VCSEL. Fast AND gate operation responsive to 50-ps-width optical pulses is achieved experimentally by increasing the detuning frequency between an injection light into the VCSEL and a lasing light from the VCSEL. A specified bit is extracted from the 10-Gb/s data signal by the fast AND gate operation and is stored as the polarization state of the VCSEL by the polarization bistability. The corresponding numerical simulations are also performed using two-mode rate equations taking into account the detuning frequency. The simulation results confirm the fast AND gate operation by increasing the detuning frequency as well as the experimental results.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E92.C.957/_p
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@ARTICLE{e92-c_7_957,
author={Takashi MORI, Yuuki SATO, Hitoshi KAWAGUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={10-Gb/s Optical Buffer Memory Using a Polarization Bistable VCSEL},
year={2009},
volume={E92-C},
number={7},
pages={957-963},
abstract={Optical buffer memory for 10-Gb/s data signal is demonstrated experimentally using a polarization bistable vertical-cavity surface-emitting laser (VCSEL). The optical buffer memory is based on an optical AND gate function and the polarization bistability of the VCSEL. Fast AND gate operation responsive to 50-ps-width optical pulses is achieved experimentally by increasing the detuning frequency between an injection light into the VCSEL and a lasing light from the VCSEL. A specified bit is extracted from the 10-Gb/s data signal by the fast AND gate operation and is stored as the polarization state of the VCSEL by the polarization bistability. The corresponding numerical simulations are also performed using two-mode rate equations taking into account the detuning frequency. The simulation results confirm the fast AND gate operation by increasing the detuning frequency as well as the experimental results.},
keywords={},
doi={10.1587/transele.E92.C.957},
ISSN={1745-1353},
month={July},}
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TY - JOUR
TI - 10-Gb/s Optical Buffer Memory Using a Polarization Bistable VCSEL
T2 - IEICE TRANSACTIONS on Electronics
SP - 957
EP - 963
AU - Takashi MORI
AU - Yuuki SATO
AU - Hitoshi KAWAGUCHI
PY - 2009
DO - 10.1587/transele.E92.C.957
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E92-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2009
AB - Optical buffer memory for 10-Gb/s data signal is demonstrated experimentally using a polarization bistable vertical-cavity surface-emitting laser (VCSEL). The optical buffer memory is based on an optical AND gate function and the polarization bistability of the VCSEL. Fast AND gate operation responsive to 50-ps-width optical pulses is achieved experimentally by increasing the detuning frequency between an injection light into the VCSEL and a lasing light from the VCSEL. A specified bit is extracted from the 10-Gb/s data signal by the fast AND gate operation and is stored as the polarization state of the VCSEL by the polarization bistability. The corresponding numerical simulations are also performed using two-mode rate equations taking into account the detuning frequency. The simulation results confirm the fast AND gate operation by increasing the detuning frequency as well as the experimental results.
ER -