The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Os efeitos da tensão em filmes de passivação nas propriedades elétricas de (0001) AlGaN / GaN HEMTs são analisados numericamente na estrutura do modelo de força de borda com características anisotrópicas nas propriedades elásticas dos nitretos do grupo III explicitamente consideradas. Tensões compressivas práticas em filmes de passivação induzem cargas piezoelétricas negativas abaixo das portas e produzem tensões de limiar mais rasas de alguns volts. Além disso, a mudança na tensão limite devido à tensão de compressão é proporcional a LG-1.1
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Naoteru SHIGEKAWA, Suehiro SUGITANI, "Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 8, pp. 1212-1217, August 2010, doi: 10.1587/transele.E93.C.1212.
Abstract: Effects of stress in passivation films on the electrical properties of (0001) AlGaN/GaN HEMTs are numerically analysed in the framework of the edge force model with anisotropical characteristics in elastic properties of group-III nitrides explicitly considered. Practical compressive stresses in passivation films induce negative piezoelectric charges below the gates and bring forth a-few-volt shallower threshold voltages. In addition, the shift in the threshold voltage due to the compressive stress is proportional to LG-1.1
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1212/_p
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@ARTICLE{e93-c_8_1212,
author={Naoteru SHIGEKAWA, Suehiro SUGITANI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs},
year={2010},
volume={E93-C},
number={8},
pages={1212-1217},
abstract={Effects of stress in passivation films on the electrical properties of (0001) AlGaN/GaN HEMTs are numerically analysed in the framework of the edge force model with anisotropical characteristics in elastic properties of group-III nitrides explicitly considered. Practical compressive stresses in passivation films induce negative piezoelectric charges below the gates and bring forth a-few-volt shallower threshold voltages. In addition, the shift in the threshold voltage due to the compressive stress is proportional to LG-1.1
keywords={},
doi={10.1587/transele.E93.C.1212},
ISSN={1745-1353},
month={August},}
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TY - JOUR
TI - Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs
T2 - IEICE TRANSACTIONS on Electronics
SP - 1212
EP - 1217
AU - Naoteru SHIGEKAWA
AU - Suehiro SUGITANI
PY - 2010
DO - 10.1587/transele.E93.C.1212
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2010
AB - Effects of stress in passivation films on the electrical properties of (0001) AlGaN/GaN HEMTs are numerically analysed in the framework of the edge force model with anisotropical characteristics in elastic properties of group-III nitrides explicitly considered. Practical compressive stresses in passivation films induce negative piezoelectric charges below the gates and bring forth a-few-volt shallower threshold voltages. In addition, the shift in the threshold voltage due to the compressive stress is proportional to LG-1.1
ER -