The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Para melhorar o desempenho de alta tensão dos transistores de efeito de campo de heterojunção AlGaN/GaN (HFETs), fabricamos HFETs AlGaN/GaN com epi-camada p-GaN em substrato de safira com um contato ôhmico para o p-GaN (p-sub HFET) . Variação da tensão limite dependente da polarização do substrato (VT-VSUB) foi usado para determinar diretamente o perfil de concentração de dopagem na camada tampão. Esse VT-VSUB O método foi desenvolvido a partir de Si MOSFET. Para HFETs, o isolador é formado por uma camada semicondutora heterogênea e cultivada epitaxialmente, enquanto para MOSFETs de Si o isolador é SiO amorfo2. Exceto que os HFETs têm maior mobilidade de canal devido à interface isolante/semicondutor epitaxial, os HFETs e os MOSFETs de Si são basicamente os mesmos no que diz respeito à física do dispositivo. Com base nestas considerações, a viabilidade deste VT-VSUB método para HFETs AlGaN / GaN foi discutido. No final, a concentração de dopagem da camada tampão foi medida em 2
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Cheng-Yu HU, Katsutoshi NAKATANI, Hiroji KAWAI, Jin-Ping AO, Yasuo OHNO, "Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 8, pp. 1234-1237, August 2010, doi: 10.1587/transele.E93.C.1234.
Abstract: To improve the high voltage performance of AlGaN/GaN heterojunction field effect transistors (HFETs), we have fabricated AlGaN/GaN HFETs with p-GaN epi-layer on sapphire substrate with an ohmic contact to the p-GaN (p-sub HFET). Substrate bias dependent threshold voltage variation (VT-VSUB) was used to directly determine the doping concentration profile in the buffer layer. This VT-VSUB method was developed from Si MOSFET. For HFETs, the insulator is formed by epitaxially grown and heterogeneous semiconductor layer while for Si MOSFETs the insulator is amorphous SiO2. Except that HFETs have higher channel mobility due to the epitaxial insulator/semiconductor interface, HFETs and Si MOSFETs are basically the same in the respect of device physics. Based on these considerations, the feasibility of this VT-VSUB method for AlGaN/GaN HFETs was discussed. In the end, the buffer layer doping concentration was measured to be 2
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1234/_p
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@ARTICLE{e93-c_8_1234,
author={Cheng-Yu HU, Katsutoshi NAKATANI, Hiroji KAWAI, Jin-Ping AO, Yasuo OHNO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer},
year={2010},
volume={E93-C},
number={8},
pages={1234-1237},
abstract={To improve the high voltage performance of AlGaN/GaN heterojunction field effect transistors (HFETs), we have fabricated AlGaN/GaN HFETs with p-GaN epi-layer on sapphire substrate with an ohmic contact to the p-GaN (p-sub HFET). Substrate bias dependent threshold voltage variation (VT-VSUB) was used to directly determine the doping concentration profile in the buffer layer. This VT-VSUB method was developed from Si MOSFET. For HFETs, the insulator is formed by epitaxially grown and heterogeneous semiconductor layer while for Si MOSFETs the insulator is amorphous SiO2. Except that HFETs have higher channel mobility due to the epitaxial insulator/semiconductor interface, HFETs and Si MOSFETs are basically the same in the respect of device physics. Based on these considerations, the feasibility of this VT-VSUB method for AlGaN/GaN HFETs was discussed. In the end, the buffer layer doping concentration was measured to be 2
keywords={},
doi={10.1587/transele.E93.C.1234},
ISSN={1745-1353},
month={August},}
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TY - JOUR
TI - Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer
T2 - IEICE TRANSACTIONS on Electronics
SP - 1234
EP - 1237
AU - Cheng-Yu HU
AU - Katsutoshi NAKATANI
AU - Hiroji KAWAI
AU - Jin-Ping AO
AU - Yasuo OHNO
PY - 2010
DO - 10.1587/transele.E93.C.1234
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2010
AB - To improve the high voltage performance of AlGaN/GaN heterojunction field effect transistors (HFETs), we have fabricated AlGaN/GaN HFETs with p-GaN epi-layer on sapphire substrate with an ohmic contact to the p-GaN (p-sub HFET). Substrate bias dependent threshold voltage variation (VT-VSUB) was used to directly determine the doping concentration profile in the buffer layer. This VT-VSUB method was developed from Si MOSFET. For HFETs, the insulator is formed by epitaxially grown and heterogeneous semiconductor layer while for Si MOSFETs the insulator is amorphous SiO2. Except that HFETs have higher channel mobility due to the epitaxial insulator/semiconductor interface, HFETs and Si MOSFETs are basically the same in the respect of device physics. Based on these considerations, the feasibility of this VT-VSUB method for AlGaN/GaN HFETs was discussed. In the end, the buffer layer doping concentration was measured to be 2
ER -