The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Estudamos teoricamente os limites de desempenho da frequência de corte do ganho de corrente, fT, para os HEMTs com InAs ou In0.70Ga0.30Como camadas intermediárias nos canais de poços multiquânticos (MQW) por meio do método Monte Carlo (MC) com correção quântica. Calculamos a distribuição do tempo de atraso ao longo do canal, τ(x) e definir o comprimento efetivo da porta, Lg,ef, como o comprimento correspondente a τ(x). Ao extrapolar Lg,ef para Lg = 0 nm, estimamos o limite inferior de Lg,ef, Lg(0),ef. Então estimamos o limite de desempenho de fT, fT(0), extrapolando fT para Lg,ef(0). O estimado fT(0) são cerca de 3.6 e 3.7 THz para os HEMTs com camadas intermediárias InAs de 5 e 8 nm de espessura, e cerca de 3.0 THz para o HEMT com In0.70Ga0.30Como camada intermediária de 8 nm de espessura, respectivamente. Quanto mais alto fT(0) nos HEMTs com camadas intermediárias InAs são atribuídos ao aumento da velocidade média do elétron, υd, no canal. Estes resultados indicam o potencial superior dos HEMTs utilizando InAs nos canais. O HEMT com camada intermediária InAs de 8 nm de espessura mostra a maior fT na condição do mesmo Lg por causa de seu υ mais altod. No entanto, o aumento da espessura total do canal resulta em maior comprimento Lg,ef(0), o que leva à restrição de fT(0). Portanto, para aumentar fT(0), é essencial fazer Lg,ef curto, além de fazer υd alto. Nossos resultados incentivam fortemente o esforço para desenvolver os HEMTs que operam na região dos terahertz.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copiar
Takayuki TAKEGISHI, Hisanao WATANABE, Shinsuke HARA, Hiroki I. FUJISHIRO, "Theoretical Study on Performance Limit of Cutoff Frequency in Nano-Scale InAs HEMTs Based on Quantum-Corrected Monte Carlo Method" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 8, pp. 1258-1265, August 2010, doi: 10.1587/transele.E93.C.1258.
Abstract: We theoretically study the performance limits of current-gain cutoff frequency, fT, for the HEMTs with InAs or In0.70Ga0.30As middle layers in the multi-quantum-well (MQW) channels by means of the quantum-corrected Monte Carlo (MC) method. We calculate the distribution of the delay time along the channel, τ(x), and define the effective gate length, Lg,eff, as the corresponding length to τ(x). By extrapolating Lg,eff to Lg = 0 nm, we estimate the lower limit of Lg,eff, Lg(0),eff. Then we estimate the performance limit of fT, fT(0), by extrapolating fT to Lg,eff(0). The estimated fT(0) are about 3.6 and 3.7 THz for the HEMTs with InAs middle layers of 5 and 8 nm in thickness, and about 3.0 THz for the HEMT with In0.70Ga0.30As middle layer of 8 nm in thickness, respectively. The higher fT(0) in the HEMTs with InAs middle layers are attributed to the increased average electron velocity, υd, in the channel. These results indicate the superior potential of the HEMTs using InAs in the channels. The HEMT with InAs middle layer of 8 nm in thickness shows the highest fT on condition of the same Lg because of its highest υd. However, the increased total channel thickness results in the longer Lg,eff(0), which leads to the restriction of fT(0). Therefore, in order to increase fT(0), it is essential to make Lg,eff short in addition to making υd high. Our results strongly encourage in making an effort to develop the HEMTs that operate in the terahertz region.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1258/_p
Copiar
@ARTICLE{e93-c_8_1258,
author={Takayuki TAKEGISHI, Hisanao WATANABE, Shinsuke HARA, Hiroki I. FUJISHIRO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Theoretical Study on Performance Limit of Cutoff Frequency in Nano-Scale InAs HEMTs Based on Quantum-Corrected Monte Carlo Method},
year={2010},
volume={E93-C},
number={8},
pages={1258-1265},
abstract={We theoretically study the performance limits of current-gain cutoff frequency, fT, for the HEMTs with InAs or In0.70Ga0.30As middle layers in the multi-quantum-well (MQW) channels by means of the quantum-corrected Monte Carlo (MC) method. We calculate the distribution of the delay time along the channel, τ(x), and define the effective gate length, Lg,eff, as the corresponding length to τ(x). By extrapolating Lg,eff to Lg = 0 nm, we estimate the lower limit of Lg,eff, Lg(0),eff. Then we estimate the performance limit of fT, fT(0), by extrapolating fT to Lg,eff(0). The estimated fT(0) are about 3.6 and 3.7 THz for the HEMTs with InAs middle layers of 5 and 8 nm in thickness, and about 3.0 THz for the HEMT with In0.70Ga0.30As middle layer of 8 nm in thickness, respectively. The higher fT(0) in the HEMTs with InAs middle layers are attributed to the increased average electron velocity, υd, in the channel. These results indicate the superior potential of the HEMTs using InAs in the channels. The HEMT with InAs middle layer of 8 nm in thickness shows the highest fT on condition of the same Lg because of its highest υd. However, the increased total channel thickness results in the longer Lg,eff(0), which leads to the restriction of fT(0). Therefore, in order to increase fT(0), it is essential to make Lg,eff short in addition to making υd high. Our results strongly encourage in making an effort to develop the HEMTs that operate in the terahertz region.},
keywords={},
doi={10.1587/transele.E93.C.1258},
ISSN={1745-1353},
month={August},}
Copiar
TY - JOUR
TI - Theoretical Study on Performance Limit of Cutoff Frequency in Nano-Scale InAs HEMTs Based on Quantum-Corrected Monte Carlo Method
T2 - IEICE TRANSACTIONS on Electronics
SP - 1258
EP - 1265
AU - Takayuki TAKEGISHI
AU - Hisanao WATANABE
AU - Shinsuke HARA
AU - Hiroki I. FUJISHIRO
PY - 2010
DO - 10.1587/transele.E93.C.1258
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2010
AB - We theoretically study the performance limits of current-gain cutoff frequency, fT, for the HEMTs with InAs or In0.70Ga0.30As middle layers in the multi-quantum-well (MQW) channels by means of the quantum-corrected Monte Carlo (MC) method. We calculate the distribution of the delay time along the channel, τ(x), and define the effective gate length, Lg,eff, as the corresponding length to τ(x). By extrapolating Lg,eff to Lg = 0 nm, we estimate the lower limit of Lg,eff, Lg(0),eff. Then we estimate the performance limit of fT, fT(0), by extrapolating fT to Lg,eff(0). The estimated fT(0) are about 3.6 and 3.7 THz for the HEMTs with InAs middle layers of 5 and 8 nm in thickness, and about 3.0 THz for the HEMT with In0.70Ga0.30As middle layer of 8 nm in thickness, respectively. The higher fT(0) in the HEMTs with InAs middle layers are attributed to the increased average electron velocity, υd, in the channel. These results indicate the superior potential of the HEMTs using InAs in the channels. The HEMT with InAs middle layer of 8 nm in thickness shows the highest fT on condition of the same Lg because of its highest υd. However, the increased total channel thickness results in the longer Lg,eff(0), which leads to the restriction of fT(0). Therefore, in order to increase fT(0), it is essential to make Lg,eff short in addition to making υd high. Our results strongly encourage in making an effort to develop the HEMTs that operate in the terahertz region.
ER -