The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Novas termopilhas baseadas em heteroestruturas AlGaAs/InGaAs, AlGaN/GaN e ZnMgO/ZnO dopadas com modulação são propostas e projetadas pela primeira vez, para aplicação em sensores de imagem infravermelha não resfriados. Espera-se que esses dispositivos ofereçam alto desempenho devido ao coeficiente Seebeck superior e à mobilidade excelentemente alta de 2DEG e 2DHG devido às camadas de canal de alta pureza na interface de heterojunção. A termopilha AlGaAs/InGaAs tem a figura de mérito Z tão grande quanto 1.1
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Masayuki ABE, "Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 8, pp. 1302-1308, August 2010, doi: 10.1587/transele.E93.C.1302.
Abstract: Novel thermopiles based on modulation doped AlGaAs/InGaAs, AlGaN/GaN, and ZnMgO/ZnO heterostructures are proposed and designed for the first time, for uncooled infrared image sensor application. These devices are expected to offer high performances due to both the superior Seebeck coefficient and the excellently high mobility of 2DEG and 2DHG due to high purity channel layers at the heterojunction interface. The AlGaAs/InGaAs thermopile has the figure-of-merit Z of as large as 1.1
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1302/_p
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@ARTICLE{e93-c_8_1302,
author={Masayuki ABE, },
journal={IEICE TRANSACTIONS on Electronics},
title={Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application},
year={2010},
volume={E93-C},
number={8},
pages={1302-1308},
abstract={Novel thermopiles based on modulation doped AlGaAs/InGaAs, AlGaN/GaN, and ZnMgO/ZnO heterostructures are proposed and designed for the first time, for uncooled infrared image sensor application. These devices are expected to offer high performances due to both the superior Seebeck coefficient and the excellently high mobility of 2DEG and 2DHG due to high purity channel layers at the heterojunction interface. The AlGaAs/InGaAs thermopile has the figure-of-merit Z of as large as 1.1
keywords={},
doi={10.1587/transele.E93.C.1302},
ISSN={1745-1353},
month={August},}
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TY - JOUR
TI - Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application
T2 - IEICE TRANSACTIONS on Electronics
SP - 1302
EP - 1308
AU - Masayuki ABE
PY - 2010
DO - 10.1587/transele.E93.C.1302
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2010
AB - Novel thermopiles based on modulation doped AlGaAs/InGaAs, AlGaN/GaN, and ZnMgO/ZnO heterostructures are proposed and designed for the first time, for uncooled infrared image sensor application. These devices are expected to offer high performances due to both the superior Seebeck coefficient and the excellently high mobility of 2DEG and 2DHG due to high purity channel layers at the heterojunction interface. The AlGaAs/InGaAs thermopile has the figure-of-merit Z of as large as 1.1
ER -