The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Um diodo de heteroestrutura unipolar nn é desenvolvido no sistema de material InP. A barreira eletrônica é formada por uma curvatura de banda de condução do tipo dente de serra que consiste em um In quaternário.0.52(AlyGa1-s)0.48Como camada com 0 y < ymax. Esta barreira é compatível com todos y para InP e está embutido entre dois n+-Camadas InGaAs. Variando o teor máximo de Al de ymax,1 = 0.7 a ymax,2 = 1 é formada uma altura de barreira variável que permite um tipo de diodo IV característica pelo design epitaxial com uma densidade de corrente ajustável dentro de 3 ordens de grandeza. A alta densidade de corrente do diodo com a altura de barreira mais baixa (ymax,1 = 0.7) o torna adequado para aplicações de alta frequência com baixos níveis de sinal. As medições de RF revelam um índice de velocidade de 52 ps/V em VD = 0.15 V. O dispositivo é investigado para conversão de energia RF em CC em transponders RFID UHF com sinais de RF de baixa amplitude.
Werner PROST
Dudu ZHANG
Benjamin MUNSTERMANN
Tobias FELDENGUT
Ralf GEITMANN
Artur POLOCZEK
Franz-Josef TEGUDE
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Werner PROST, Dudu ZHANG, Benjamin MUNSTERMANN, Tobias FELDENGUT, Ralf GEITMANN, Artur POLOCZEK, Franz-Josef TEGUDE, "InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal Rectification" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 8, pp. 1309-1314, August 2010, doi: 10.1587/transele.E93.C.1309.
Abstract: A unipolar n-n heterostrucuture diode is developed in the InP material system. The electronic barrier is formed by a saw tooth type of conduction band bending which consists of a quaternary In0.52(AlyGa1-y)0.48As layer with 0 < y < ymax. This barrier is lattice matched for all y to InP and is embedded between two n+-InGaAs layers. By varying the maximum Al-content from ymax,1 = 0.7 to ymax,2 = 1 a variable barrier height is formed which enables a diode-type I-V characteristic by epitaxial design with an adjustable current density within 3 orders of magnitude. The high current density of the diode with the lower barrier height (ymax,1 = 0.7) makes it suitable for high frequency applications at low signal levels. RF measurements reveal a speed index of 52 ps/V at VD = 0.15 V. The device is investigated for RF-to-DC power conversion in UHF RFID transponders with low-amplitude RF signals.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1309/_p
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@ARTICLE{e93-c_8_1309,
author={Werner PROST, Dudu ZHANG, Benjamin MUNSTERMANN, Tobias FELDENGUT, Ralf GEITMANN, Artur POLOCZEK, Franz-Josef TEGUDE, },
journal={IEICE TRANSACTIONS on Electronics},
title={InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal Rectification},
year={2010},
volume={E93-C},
number={8},
pages={1309-1314},
abstract={A unipolar n-n heterostrucuture diode is developed in the InP material system. The electronic barrier is formed by a saw tooth type of conduction band bending which consists of a quaternary In0.52(AlyGa1-y)0.48As layer with 0 < y < ymax. This barrier is lattice matched for all y to InP and is embedded between two n+-InGaAs layers. By varying the maximum Al-content from ymax,1 = 0.7 to ymax,2 = 1 a variable barrier height is formed which enables a diode-type I-V characteristic by epitaxial design with an adjustable current density within 3 orders of magnitude. The high current density of the diode with the lower barrier height (ymax,1 = 0.7) makes it suitable for high frequency applications at low signal levels. RF measurements reveal a speed index of 52 ps/V at VD = 0.15 V. The device is investigated for RF-to-DC power conversion in UHF RFID transponders with low-amplitude RF signals.},
keywords={},
doi={10.1587/transele.E93.C.1309},
ISSN={1745-1353},
month={August},}
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TY - JOUR
TI - InP-Based Unipolar Heterostructure Diode for Vertical Integration, Level Shifting, and Small Signal Rectification
T2 - IEICE TRANSACTIONS on Electronics
SP - 1309
EP - 1314
AU - Werner PROST
AU - Dudu ZHANG
AU - Benjamin MUNSTERMANN
AU - Tobias FELDENGUT
AU - Ralf GEITMANN
AU - Artur POLOCZEK
AU - Franz-Josef TEGUDE
PY - 2010
DO - 10.1587/transele.E93.C.1309
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 8
JA - IEICE TRANSACTIONS on Electronics
Y1 - August 2010
AB - A unipolar n-n heterostrucuture diode is developed in the InP material system. The electronic barrier is formed by a saw tooth type of conduction band bending which consists of a quaternary In0.52(AlyGa1-y)0.48As layer with 0 < y < ymax. This barrier is lattice matched for all y to InP and is embedded between two n+-InGaAs layers. By varying the maximum Al-content from ymax,1 = 0.7 to ymax,2 = 1 a variable barrier height is formed which enables a diode-type I-V characteristic by epitaxial design with an adjustable current density within 3 orders of magnitude. The high current density of the diode with the lower barrier height (ymax,1 = 0.7) makes it suitable for high frequency applications at low signal levels. RF measurements reveal a speed index of 52 ps/V at VD = 0.15 V. The device is investigated for RF-to-DC power conversion in UHF RFID transponders with low-amplitude RF signals.
ER -