The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
As propriedades elétricas de transistores de filme fino (TFTs) de poli-Si usando recozimento térmico rápido com várias espessuras de óxido de porta foram estudadas neste trabalho. Verificou-se que as características elétricas do Poly-Si TFT com a espessura de óxido de porta mais fina após o tratamento com RTA exibem a maior melhoria de desempenho em comparação com o TFT com óxido espesso como resultado do aumento das quantidades incorporadas de nitrogênio e oxigênio. Assim, os efeitos combinados podem manter as vantagens e evitar as desvantagens do óxido em escala reduzida, que é adequado para produção em massa de displays de pequeno a médio porte.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copiar
Ching-Lin FAN, Yi-Yan LIN, Yan-Hang YANG, Hung-Che CHEN, "Effects of Rapid Thermal Annealing on Poly-Si TFT with Different Gate Oxide Thickness" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 1, pp. 151-153, January 2010, doi: 10.1587/transele.E93.C.151.
Abstract: The electrical properties of poly-Si thin film transistors (TFTs) using rapid thermal annealing with various gate oxide thicknesses were studied in this work. It was found that Poly-Si TFT electrical characteristics with the thinnest gate oxide thickness after RTA treatment exhibits the largest performance improvement compared to TFT with thick oxide as a result of the increased incorporated amounts of the nitrogen and oxygen. Thus, the combined effects can maintain the advantages and avoid the disadvantages of scaled-down oxide, which is suitable for small-to-medium display mass production.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.151/_p
Copiar
@ARTICLE{e93-c_1_151,
author={Ching-Lin FAN, Yi-Yan LIN, Yan-Hang YANG, Hung-Che CHEN, },
journal={IEICE TRANSACTIONS on Electronics},
title={Effects of Rapid Thermal Annealing on Poly-Si TFT with Different Gate Oxide Thickness},
year={2010},
volume={E93-C},
number={1},
pages={151-153},
abstract={The electrical properties of poly-Si thin film transistors (TFTs) using rapid thermal annealing with various gate oxide thicknesses were studied in this work. It was found that Poly-Si TFT electrical characteristics with the thinnest gate oxide thickness after RTA treatment exhibits the largest performance improvement compared to TFT with thick oxide as a result of the increased incorporated amounts of the nitrogen and oxygen. Thus, the combined effects can maintain the advantages and avoid the disadvantages of scaled-down oxide, which is suitable for small-to-medium display mass production.},
keywords={},
doi={10.1587/transele.E93.C.151},
ISSN={1745-1353},
month={January},}
Copiar
TY - JOUR
TI - Effects of Rapid Thermal Annealing on Poly-Si TFT with Different Gate Oxide Thickness
T2 - IEICE TRANSACTIONS on Electronics
SP - 151
EP - 153
AU - Ching-Lin FAN
AU - Yi-Yan LIN
AU - Yan-Hang YANG
AU - Hung-Che CHEN
PY - 2010
DO - 10.1587/transele.E93.C.151
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2010
AB - The electrical properties of poly-Si thin film transistors (TFTs) using rapid thermal annealing with various gate oxide thicknesses were studied in this work. It was found that Poly-Si TFT electrical characteristics with the thinnest gate oxide thickness after RTA treatment exhibits the largest performance improvement compared to TFT with thick oxide as a result of the increased incorporated amounts of the nitrogen and oxygen. Thus, the combined effects can maintain the advantages and avoid the disadvantages of scaled-down oxide, which is suitable for small-to-medium display mass production.
ER -