The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
A estrutura do canal MOSFET de nanogrades foi otimizada simplesmente arredondando os cantos das nanogrades. As atuais dirigibilidades dos MOSFETs de canal nanograting otimizados foram aprimoradas em cerca de 20% e 50% para MOSFETs de canal n e canal p, respectivamente. As mudanças de mobilidade foram analisadas com base na tensão do canal, bem como na mudança teórica das mobilidades por várias orientações de superfície. A tensão de compressão interna de 0.23% foi medida no canal. Ao suprimir o aumento do campo elétrico na borda do canto do canal de nanogração para menos de 10%, os MOSFETs de nanogração arredondados fabricados alcançaram vidas úteis de NBTI e TDDB tão longas quanto as dos dispositivos planares convencionais.
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copiar
Takashi ITO, Xiaoli ZHU, Shin-Ichiro KUROKI, Koji KOTANI, "Highly Reliable and Drivability-Enhanced MOS Transistors with Rounded Nanograting Channels" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 11, pp. 1638-1644, November 2010, doi: 10.1587/transele.E93.C.1638.
Abstract: The structure of the nanograting channel MOSFET was optimized by simply rounding the corners of the nanogratings. The current drivabilities of the optimized nanograting channel MOSFETs were enhanced by about 20% and 50% for both n-channel and p-channel MOSFETs, respectively. The mobility changes were analyzed on the basis of channel stress as well as theoretical change of mobilities by various surface orientations. The internal compressive stress of 0.23% was measured in the channel. By suppressing the electric field increase at the corner edge of the nanograting channel to less than 10%, the fabricated rounded nanograting MOSFETs achieved lifetimes of NBTI and TDDB as long as those of conventional planar devices.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1638/_p
Copiar
@ARTICLE{e93-c_11_1638,
author={Takashi ITO, Xiaoli ZHU, Shin-Ichiro KUROKI, Koji KOTANI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Highly Reliable and Drivability-Enhanced MOS Transistors with Rounded Nanograting Channels},
year={2010},
volume={E93-C},
number={11},
pages={1638-1644},
abstract={The structure of the nanograting channel MOSFET was optimized by simply rounding the corners of the nanogratings. The current drivabilities of the optimized nanograting channel MOSFETs were enhanced by about 20% and 50% for both n-channel and p-channel MOSFETs, respectively. The mobility changes were analyzed on the basis of channel stress as well as theoretical change of mobilities by various surface orientations. The internal compressive stress of 0.23% was measured in the channel. By suppressing the electric field increase at the corner edge of the nanograting channel to less than 10%, the fabricated rounded nanograting MOSFETs achieved lifetimes of NBTI and TDDB as long as those of conventional planar devices.},
keywords={},
doi={10.1587/transele.E93.C.1638},
ISSN={1745-1353},
month={November},}
Copiar
TY - JOUR
TI - Highly Reliable and Drivability-Enhanced MOS Transistors with Rounded Nanograting Channels
T2 - IEICE TRANSACTIONS on Electronics
SP - 1638
EP - 1644
AU - Takashi ITO
AU - Xiaoli ZHU
AU - Shin-Ichiro KUROKI
AU - Koji KOTANI
PY - 2010
DO - 10.1587/transele.E93.C.1638
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 11
JA - IEICE TRANSACTIONS on Electronics
Y1 - November 2010
AB - The structure of the nanograting channel MOSFET was optimized by simply rounding the corners of the nanogratings. The current drivabilities of the optimized nanograting channel MOSFETs were enhanced by about 20% and 50% for both n-channel and p-channel MOSFETs, respectively. The mobility changes were analyzed on the basis of channel stress as well as theoretical change of mobilities by various surface orientations. The internal compressive stress of 0.23% was measured in the channel. By suppressing the electric field increase at the corner edge of the nanograting channel to less than 10%, the fabricated rounded nanograting MOSFETs achieved lifetimes of NBTI and TDDB as long as those of conventional planar devices.
ER -