The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Este artigo apresenta uma referência de tensão que utiliza transistores MOS conectados virtualmente por diodo, polarizados na região de inversão fraca. A arquitetura proposta aumenta o ganho do circuito de feedback que consequentemente reduz a sensibilidade do sistema e, consequentemente, melhora o PSRR. O circuito é projetado e simulado em tecnologia CMOS padrão de 0.18 µm. Os resultados da simulação em HSPICE indicam a operação bem-sucedida do circuito da seguinte forma: o PSRR na frequência DC é de 86 dB e para a faixa de temperatura de -55
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Kianoush SOURI, Hossein SHAMSI, Mehrshad KAZEMI, Kamran SOURI, "A High PSRR Bandgap Voltage Reference with Virtually Diode-Connected MOS Transistors" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 12, pp. 1708-1712, December 2010, doi: 10.1587/transele.E93.C.1708.
Abstract: This paper presents a voltage reference that utilizes the virtually diode-connected MOS transistors, biased in the weak-inversion region. The proposed architecture increases the gain of the feedback loop that consequently reduces the system sensitivity, and hence improves the PSRR. The circuit is designed and simulated in a standard 0.18 µm CMOS technology. The simulation results in HSPICE indicate the successful operation of the circuit as follows: the PSRR at DC frequency is 86 dB and for the temperature range from -55
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.1708/_p
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@ARTICLE{e93-c_12_1708,
author={Kianoush SOURI, Hossein SHAMSI, Mehrshad KAZEMI, Kamran SOURI, },
journal={IEICE TRANSACTIONS on Electronics},
title={A High PSRR Bandgap Voltage Reference with Virtually Diode-Connected MOS Transistors},
year={2010},
volume={E93-C},
number={12},
pages={1708-1712},
abstract={This paper presents a voltage reference that utilizes the virtually diode-connected MOS transistors, biased in the weak-inversion region. The proposed architecture increases the gain of the feedback loop that consequently reduces the system sensitivity, and hence improves the PSRR. The circuit is designed and simulated in a standard 0.18 µm CMOS technology. The simulation results in HSPICE indicate the successful operation of the circuit as follows: the PSRR at DC frequency is 86 dB and for the temperature range from -55
keywords={},
doi={10.1587/transele.E93.C.1708},
ISSN={1745-1353},
month={December},}
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TY - JOUR
TI - A High PSRR Bandgap Voltage Reference with Virtually Diode-Connected MOS Transistors
T2 - IEICE TRANSACTIONS on Electronics
SP - 1708
EP - 1712
AU - Kianoush SOURI
AU - Hossein SHAMSI
AU - Mehrshad KAZEMI
AU - Kamran SOURI
PY - 2010
DO - 10.1587/transele.E93.C.1708
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 12
JA - IEICE TRANSACTIONS on Electronics
Y1 - December 2010
AB - This paper presents a voltage reference that utilizes the virtually diode-connected MOS transistors, biased in the weak-inversion region. The proposed architecture increases the gain of the feedback loop that consequently reduces the system sensitivity, and hence improves the PSRR. The circuit is designed and simulated in a standard 0.18 µm CMOS technology. The simulation results in HSPICE indicate the successful operation of the circuit as follows: the PSRR at DC frequency is 86 dB and for the temperature range from -55
ER -