The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Um circuito de resistência diferencial negativa de pico múltiplo (NDR) feito de transistor de efeito de campo (MOS) semicondutor de óxido metálico baseado em Si padrão e transistor bipolar de heterojunção (HBT) baseado em SiGe é demonstrado. Podemos obter uma curva IV de três picos conectando três circuitos MOS-HBT-NDR em casco, projetando adequadamente os parâmetros MOS. Este novo circuito NDR de três picos possui características de corrente-tensão ajustáveis e alta relação de corrente pico-vale (PVCR). Podemos ajustar os valores de PVCR para até 11.5, 6.5 e 10.3 para três picos, respectivamente. Como o circuito NDR é um elemento não linear muito forte, discutimos os fenômenos de histerese extrínseca neste circuito NDR de múltiplos picos. O efeito da resistência em série nos fenômenos de histerese também é investigado. Nosso projeto e fabricação do circuito NDR são baseados no processo SiGe BiCMOS padrão de 0.35 µm.
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Kwang-Jow GAN, Dong-Shong LIANG, "Investigation of Adjustable Current-Voltage Characteristics and Hysteresis Phenomena for Multiple-Peak Negative Differential Resistance Circuit" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 4, pp. 514-520, April 2010, doi: 10.1587/transele.E93.C.514.
Abstract: A multiple-peak negative differential resistance (NDR) circuit made of standard Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) is demonstrated. We can obtain a three-peak I-V curve by connecting three cascoded MOS-HBT-NDR circuits by suitably designing the MOS parameters. This novel three-peak NDR circuit possesses the adjustable current-voltage characteristics and high peak-to-valley current ratio (PVCR). We can adjust the PVCR values to be as high as 11.5, 6.5, and 10.3 for three peaks, respectively. Because the NDR circuit is a very strong nonlinear element, we discuss the extrinsic hysteresis phenomena in this multiple-peak NDR circuit. The effect of series resistance on hysteresis phenomena is also investigated. Our design and fabrication of the NDR circuit is based on the standard 0.35 µm SiGe BiCMOS process.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.514/_p
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@ARTICLE{e93-c_4_514,
author={Kwang-Jow GAN, Dong-Shong LIANG, },
journal={IEICE TRANSACTIONS on Electronics},
title={Investigation of Adjustable Current-Voltage Characteristics and Hysteresis Phenomena for Multiple-Peak Negative Differential Resistance Circuit},
year={2010},
volume={E93-C},
number={4},
pages={514-520},
abstract={A multiple-peak negative differential resistance (NDR) circuit made of standard Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) is demonstrated. We can obtain a three-peak I-V curve by connecting three cascoded MOS-HBT-NDR circuits by suitably designing the MOS parameters. This novel three-peak NDR circuit possesses the adjustable current-voltage characteristics and high peak-to-valley current ratio (PVCR). We can adjust the PVCR values to be as high as 11.5, 6.5, and 10.3 for three peaks, respectively. Because the NDR circuit is a very strong nonlinear element, we discuss the extrinsic hysteresis phenomena in this multiple-peak NDR circuit. The effect of series resistance on hysteresis phenomena is also investigated. Our design and fabrication of the NDR circuit is based on the standard 0.35 µm SiGe BiCMOS process.},
keywords={},
doi={10.1587/transele.E93.C.514},
ISSN={1745-1353},
month={April},}
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TY - JOUR
TI - Investigation of Adjustable Current-Voltage Characteristics and Hysteresis Phenomena for Multiple-Peak Negative Differential Resistance Circuit
T2 - IEICE TRANSACTIONS on Electronics
SP - 514
EP - 520
AU - Kwang-Jow GAN
AU - Dong-Shong LIANG
PY - 2010
DO - 10.1587/transele.E93.C.514
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2010
AB - A multiple-peak negative differential resistance (NDR) circuit made of standard Si-based metal-oxide-semiconductor field-effect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) is demonstrated. We can obtain a three-peak I-V curve by connecting three cascoded MOS-HBT-NDR circuits by suitably designing the MOS parameters. This novel three-peak NDR circuit possesses the adjustable current-voltage characteristics and high peak-to-valley current ratio (PVCR). We can adjust the PVCR values to be as high as 11.5, 6.5, and 10.3 for three peaks, respectively. Because the NDR circuit is a very strong nonlinear element, we discuss the extrinsic hysteresis phenomena in this multiple-peak NDR circuit. The effect of series resistance on hysteresis phenomena is also investigated. Our design and fabrication of the NDR circuit is based on the standard 0.35 µm SiGe BiCMOS process.
ER -