The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Estudamos a propriedade de transmissão do elétron no MOSFET vertical (V-MOSFET) do ponto de vista da eletrodinâmica quântica. Para obter a imagem intuitiva da propriedade de transmissão de elétrons através do canal do V-MOSFET, resolvemos a equação de Schrodinger dependente do tempo no espaço real, empregando o método do operador dividido. Injetamos um pacote de ondas eletrônicas no corpo do V-MOSFET vindo da fonte e traçamos o desenvolvimento temporal da função das ondas eletrônicas no corpo e na região de drenagem. Mostramos com sucesso que a função de onda do elétron se propaga através dos estados ressonantes do potencial do corpo. Nossas abordagens sugeridas abrem a discussão quantitativa e intuitiva para a dinâmica da portadora no V-MOSFET no limite quântico.
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Masakazu MURAGUCHI, Tetsuo ENDOH, "Study on Quantum Electro-Dynamics in Vertical MOSFET" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 5, pp. 552-556, May 2010, doi: 10.1587/transele.E93.C.552.
Abstract: We have studied transmission property of electron in vertical MOSFET (V-MOSFET) from the viewpoint of quantum electro-dynamics. To obtain the intuitive picture of electron transmission property through channel of the V-MOSFET, we solve the time-dependent Schrodinger equation in real space by employing the split operator method. We injected an electron wave packet into the body of the V-MOSFET from the source, and traced the time-development of electron-wave function in the body and drain region. We successfully showed that the electron wave function propagates through the resonant states of the body potential. Our suggested approaches open the quantative and intuitive discussion for the carrier dynamics in the V-MOSFET on quantum limit.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.552/_p
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@ARTICLE{e93-c_5_552,
author={Masakazu MURAGUCHI, Tetsuo ENDOH, },
journal={IEICE TRANSACTIONS on Electronics},
title={Study on Quantum Electro-Dynamics in Vertical MOSFET},
year={2010},
volume={E93-C},
number={5},
pages={552-556},
abstract={We have studied transmission property of electron in vertical MOSFET (V-MOSFET) from the viewpoint of quantum electro-dynamics. To obtain the intuitive picture of electron transmission property through channel of the V-MOSFET, we solve the time-dependent Schrodinger equation in real space by employing the split operator method. We injected an electron wave packet into the body of the V-MOSFET from the source, and traced the time-development of electron-wave function in the body and drain region. We successfully showed that the electron wave function propagates through the resonant states of the body potential. Our suggested approaches open the quantative and intuitive discussion for the carrier dynamics in the V-MOSFET on quantum limit.},
keywords={},
doi={10.1587/transele.E93.C.552},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Study on Quantum Electro-Dynamics in Vertical MOSFET
T2 - IEICE TRANSACTIONS on Electronics
SP - 552
EP - 556
AU - Masakazu MURAGUCHI
AU - Tetsuo ENDOH
PY - 2010
DO - 10.1587/transele.E93.C.552
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2010
AB - We have studied transmission property of electron in vertical MOSFET (V-MOSFET) from the viewpoint of quantum electro-dynamics. To obtain the intuitive picture of electron transmission property through channel of the V-MOSFET, we solve the time-dependent Schrodinger equation in real space by employing the split operator method. We injected an electron wave packet into the body of the V-MOSFET from the source, and traced the time-development of electron-wave function in the body and drain region. We successfully showed that the electron wave function propagates through the resonant states of the body potential. Our suggested approaches open the quantative and intuitive discussion for the carrier dynamics in the V-MOSFET on quantum limit.
ER -