The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Fabricamos e examinamos o efeito de limitação de corrente para diodos InP Gunn com operação estável no modo de camada de depleção de diodos para osciladores Gunn de alta eficiência. A limitação da corrente no cátodo foi conseguida por uma barreira Schottky rasa na interface. Discutimos o procedimento de fabricação, os resultados para resistência diferencial negativa e testes de RF para diodos InP Gunn. Foi demonstrado que os diodos Gunn fabricados têm potência de saída de 10.22 dBm na frequência de 90.13 GHz. Sua tensão de entrada e corrente correspondente foram 8.55 V e 252 mA, respectivamente.
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Mi-Ra KIM, Jin-Koo RHEE, Chang-Woo LEE, Yeon-Sik CHAE, Jae-Hyun CHOI, Wan-Joo KIM, "InP Gunn Diodes with Current Limiting Contact for High Efficiency Gunn Oscillators" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 5, pp. 585-589, May 2010, doi: 10.1587/transele.E93.C.585.
Abstract: We fabricated and examined current limiting effect for InP Gunn diodes with stable depletion layer mode operation of diodes for high efficiency Gunn oscillators. Current limiting at the cathode was achieved by a shallow Schottky barrier at the interface. We discussed fabrication procedure, the results for negative differential resistance and rf tests for InP Gunn diodes. It was shown that the fabricated Gunn diodes have the output power of 10.22 dBm at a frequency of 90.13 GHz. Its input voltage and corresponding current were 8.55 V and 252 mA, respectively.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.585/_p
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@ARTICLE{e93-c_5_585,
author={Mi-Ra KIM, Jin-Koo RHEE, Chang-Woo LEE, Yeon-Sik CHAE, Jae-Hyun CHOI, Wan-Joo KIM, },
journal={IEICE TRANSACTIONS on Electronics},
title={InP Gunn Diodes with Current Limiting Contact for High Efficiency Gunn Oscillators},
year={2010},
volume={E93-C},
number={5},
pages={585-589},
abstract={We fabricated and examined current limiting effect for InP Gunn diodes with stable depletion layer mode operation of diodes for high efficiency Gunn oscillators. Current limiting at the cathode was achieved by a shallow Schottky barrier at the interface. We discussed fabrication procedure, the results for negative differential resistance and rf tests for InP Gunn diodes. It was shown that the fabricated Gunn diodes have the output power of 10.22 dBm at a frequency of 90.13 GHz. Its input voltage and corresponding current were 8.55 V and 252 mA, respectively.},
keywords={},
doi={10.1587/transele.E93.C.585},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - InP Gunn Diodes with Current Limiting Contact for High Efficiency Gunn Oscillators
T2 - IEICE TRANSACTIONS on Electronics
SP - 585
EP - 589
AU - Mi-Ra KIM
AU - Jin-Koo RHEE
AU - Chang-Woo LEE
AU - Yeon-Sik CHAE
AU - Jae-Hyun CHOI
AU - Wan-Joo KIM
PY - 2010
DO - 10.1587/transele.E93.C.585
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2010
AB - We fabricated and examined current limiting effect for InP Gunn diodes with stable depletion layer mode operation of diodes for high efficiency Gunn oscillators. Current limiting at the cathode was achieved by a shallow Schottky barrier at the interface. We discussed fabrication procedure, the results for negative differential resistance and rf tests for InP Gunn diodes. It was shown that the fabricated Gunn diodes have the output power of 10.22 dBm at a frequency of 90.13 GHz. Its input voltage and corresponding current were 8.55 V and 252 mA, respectively.
ER -