The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Fabricamos sensores de tensão VDP (van der Pauw) em (111) superfícies de silício. Este trabalho concentra-se no estudo dos efeitos de deformação em sensores de tensão VDP, que foram geralmente ignorados em trabalhos anteriores, para medições precisas de tensões em matrizes em pacotes eletrônicos. Observou-se que a sensibilidade ao estresse é aproximadamente 10% maior para sensores VDP tipo p em comparação com sensores VDP tipo n.
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Chun-Hyung CHO, Ginkyu CHOI, Ho-Young CHA, "Strain Effects in van der Pauw (VDP) Stress Sensor Fabricated on (111) Silicon" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 5, pp. 640-643, May 2010, doi: 10.1587/transele.E93.C.640.
Abstract: We have fabricated VDP (van der Pauw) stress sensors on (111) silicon surfaces. This work focuses on a study of strain effects in VDP stress sensors, which were generally ignored in previous works, for the precise measurements of die stresses in electronic packages. The stress sensitivity was observed to be approximately 10% larger for p-type VDP sensors compared to n-type VDP sensors.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.640/_p
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@ARTICLE{e93-c_5_640,
author={Chun-Hyung CHO, Ginkyu CHOI, Ho-Young CHA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Strain Effects in van der Pauw (VDP) Stress Sensor Fabricated on (111) Silicon},
year={2010},
volume={E93-C},
number={5},
pages={640-643},
abstract={We have fabricated VDP (van der Pauw) stress sensors on (111) silicon surfaces. This work focuses on a study of strain effects in VDP stress sensors, which were generally ignored in previous works, for the precise measurements of die stresses in electronic packages. The stress sensitivity was observed to be approximately 10% larger for p-type VDP sensors compared to n-type VDP sensors.},
keywords={},
doi={10.1587/transele.E93.C.640},
ISSN={1745-1353},
month={May},}
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TY - JOUR
TI - Strain Effects in van der Pauw (VDP) Stress Sensor Fabricated on (111) Silicon
T2 - IEICE TRANSACTIONS on Electronics
SP - 640
EP - 643
AU - Chun-Hyung CHO
AU - Ginkyu CHOI
AU - Ho-Young CHA
PY - 2010
DO - 10.1587/transele.E93.C.640
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2010
AB - We have fabricated VDP (van der Pauw) stress sensors on (111) silicon surfaces. This work focuses on a study of strain effects in VDP stress sensors, which were generally ignored in previous works, for the precise measurements of die stresses in electronic packages. The stress sensitivity was observed to be approximately 10% larger for p-type VDP sensors compared to n-type VDP sensors.
ER -