The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Nós investigamos o espalhamento da corrente de coletor em transistores bipolares de heterojunção única (SHBTs) InGaAs com uma espessura de coletor de 75 nm. Os SHBTs foram fabricados com três larguras de emissor diferentes – 200, 400 e 600 nm – e a maior frequência de corte obtida foi 468 GHz. A relação entre a densidade de corrente na frequência de corte mais alta e a largura do emissor não pôde ser usada para estimar o espalhamento da corrente porque era independente da tensão base do coletor. Porém, a relação entre a densidade de corrente com o aumento da capacitância total coletor-base e a largura do emissor indica espalhamento de corrente no coletor. O espalhamento atual foi estimado em aproximadamente 90 nm.
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Yasuyuki MIYAMOTO, Shinnosuke TAKAHASHI, Takashi KOBAYASHI, Hiroyuki SUZUKI, Kazuhito FURUYA, "Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 5, pp. 644-647, May 2010, doi: 10.1587/transele.E93.C.644.
Abstract: We investigated collector current spreading in InGaAs single heterojunction bipolar transistors (SHBTs) having a collector thickness of 75 nm. SHBTs were fabricated with three different emitter widths -- 200, 400, and 600 nm -- and the highest cutoff frequency that was obtained was 468 GHz. The relationship between the current density at the highest cutoff frequency and the emitter width could not be used to estimate the current spreading because it was independent of the collector-base voltage. However, the relationship between the current density with the increase in the total collector-base capacitance and the emitter width indicates current spreading in the collector. The current spreading was estimated to be approximately 90 nm.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.644/_p
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@ARTICLE{e93-c_5_644,
author={Yasuyuki MIYAMOTO, Shinnosuke TAKAHASHI, Takashi KOBAYASHI, Hiroyuki SUZUKI, Kazuhito FURUYA, },
journal={IEICE TRANSACTIONS on Electronics},
title={Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector},
year={2010},
volume={E93-C},
number={5},
pages={644-647},
abstract={We investigated collector current spreading in InGaAs single heterojunction bipolar transistors (SHBTs) having a collector thickness of 75 nm. SHBTs were fabricated with three different emitter widths -- 200, 400, and 600 nm -- and the highest cutoff frequency that was obtained was 468 GHz. The relationship between the current density at the highest cutoff frequency and the emitter width could not be used to estimate the current spreading because it was independent of the collector-base voltage. However, the relationship between the current density with the increase in the total collector-base capacitance and the emitter width indicates current spreading in the collector. The current spreading was estimated to be approximately 90 nm.},
keywords={},
doi={10.1587/transele.E93.C.644},
ISSN={1745-1353},
month={May},}
Copiar
TY - JOUR
TI - Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector
T2 - IEICE TRANSACTIONS on Electronics
SP - 644
EP - 647
AU - Yasuyuki MIYAMOTO
AU - Shinnosuke TAKAHASHI
AU - Takashi KOBAYASHI
AU - Hiroyuki SUZUKI
AU - Kazuhito FURUYA
PY - 2010
DO - 10.1587/transele.E93.C.644
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 5
JA - IEICE TRANSACTIONS on Electronics
Y1 - May 2010
AB - We investigated collector current spreading in InGaAs single heterojunction bipolar transistors (SHBTs) having a collector thickness of 75 nm. SHBTs were fabricated with three different emitter widths -- 200, 400, and 600 nm -- and the highest cutoff frequency that was obtained was 468 GHz. The relationship between the current density at the highest cutoff frequency and the emitter width could not be used to estimate the current spreading because it was independent of the collector-base voltage. However, the relationship between the current density with the increase in the total collector-base capacitance and the emitter width indicates current spreading in the collector. The current spreading was estimated to be approximately 90 nm.
ER -