The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Propomos um circuito CMOS que pode ser usado como equivalente a resistores. Este circuito usa um par diferencial simples com MOSFETs conectados por diodo e opera como um resistor de alta resistência quando acionado na região sublimiar dos MOSFETs. Sua resistência pode ser controlada na faixa de 1-1000 MΩ ajustando uma corrente de cauda para o par diferencial. Os resultados da fabricação do dispositivo com uma tecnologia de processo CMOS 0.35P-2M de 4 µm são descritos. A resistência foi de 13 MΩ para uma corrente de cauda de 10 nA e 135 MΩ para 1 nA. A área do chip era de 105 µm
The copyright of the original papers published on this site belongs to IEICE. Unauthorized use of the original or translated papers is prohibited. See IEICE Provisions on Copyright for details.
Copiar
Shin'ichi ASAI, Ken UENO, Tetsuya ASAI, Yoshihito AMEMIYA, "High-Resistance Resistor Consisting of a Subthreshold CMOS Differential Pair" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 6, pp. 741-746, June 2010, doi: 10.1587/transele.E93.C.741.
Abstract: We propose a CMOS circuit that can be used as an equivalent to resistors. This circuit uses a simple differential pair with diode-connected MOSFETs and operates as a high-resistance resistor when driven in the subthreshold region of MOSFETs. Its resistance can be controlled in a range of 1-1000 MΩ by adjusting a tail current for the differential pair. The results of device fabrication with a 0.35-µm 2P-4M CMOS process technology is described. The resistance was 13 MΩ for a tail current of 10 nA and 135 MΩ for 1 nA. The chip area was 105 µm
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.741/_p
Copiar
@ARTICLE{e93-c_6_741,
author={Shin'ichi ASAI, Ken UENO, Tetsuya ASAI, Yoshihito AMEMIYA, },
journal={IEICE TRANSACTIONS on Electronics},
title={High-Resistance Resistor Consisting of a Subthreshold CMOS Differential Pair},
year={2010},
volume={E93-C},
number={6},
pages={741-746},
abstract={We propose a CMOS circuit that can be used as an equivalent to resistors. This circuit uses a simple differential pair with diode-connected MOSFETs and operates as a high-resistance resistor when driven in the subthreshold region of MOSFETs. Its resistance can be controlled in a range of 1-1000 MΩ by adjusting a tail current for the differential pair. The results of device fabrication with a 0.35-µm 2P-4M CMOS process technology is described. The resistance was 13 MΩ for a tail current of 10 nA and 135 MΩ for 1 nA. The chip area was 105 µm
keywords={},
doi={10.1587/transele.E93.C.741},
ISSN={1745-1353},
month={June},}
Copiar
TY - JOUR
TI - High-Resistance Resistor Consisting of a Subthreshold CMOS Differential Pair
T2 - IEICE TRANSACTIONS on Electronics
SP - 741
EP - 746
AU - Shin'ichi ASAI
AU - Ken UENO
AU - Tetsuya ASAI
AU - Yoshihito AMEMIYA
PY - 2010
DO - 10.1587/transele.E93.C.741
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 6
JA - IEICE TRANSACTIONS on Electronics
Y1 - June 2010
AB - We propose a CMOS circuit that can be used as an equivalent to resistors. This circuit uses a simple differential pair with diode-connected MOSFETs and operates as a high-resistance resistor when driven in the subthreshold region of MOSFETs. Its resistance can be controlled in a range of 1-1000 MΩ by adjusting a tail current for the differential pair. The results of device fabrication with a 0.35-µm 2P-4M CMOS process technology is described. The resistance was 13 MΩ for a tail current of 10 nA and 135 MΩ for 1 nA. The chip area was 105 µm
ER -