The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Um método de compensação de distorção de intermodulação (IMD) para efeito de memória térmica usando um multiestágio RCcircuito -ladder foi proposto. O IMD causado pelo efeito de memória térmica em um amplificador InGaP/GaAs HBT foi compensado pela inserção de um amplificador multiestágio RCcircuito -ladder no circuito de polarização de base do amplificador. Como o fluxo de calor devido ao autoaquecimento no transistor pode ser aproximado com um sistema térmico de múltiplos estágios RC-circuito escada, o cancelamento do IMD por um efeito de memória elétrica adicional gerado a partir do RC- circuito de escada é previsto. Os efeitos de memória causam características assimétricas entre o IMD superior e inferior. O IMD causado pelos efeitos de memória é expresso como uma soma vetorial de cada origem. Ao ajustar uma característica de reatância elétrica para subharmônicos afetados pelo efeito de memória térmica no circuito amplificador, a característica assimétrica é simetrizada. Os parâmetros do RC-circuito em escada foram estimados para que a característica de reatância elétrica ajustada seja reproduzida na simulação. Um amplificador HBT InGaP / GaAs fabricado com o circuito de compensação de efeito de memória térmica exibiu características IMD simetrizadas e suprimidas.
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Ryo ISHIKAWA, Junichi KIMURA, Yukio TAKAHASHI, Kazuhiko HONJO, "Distortion Compensation for Thermal Memory Effect on InGaP/GaAs HBT Amplifier by Inserting RC-Ladder Circuit in Base Bias Circuit" in IEICE TRANSACTIONS on Electronics,
vol. E93-C, no. 7, pp. 958-965, July 2010, doi: 10.1587/transele.E93.C.958.
Abstract: An inter-modulation distortion (IMD) compensation method for thermal memory effect using a multistage RC-ladder circuit has been proposed. The IMD caused by the thermal memory effect on an InGaP/GaAs HBT amplifier was compensated for by inserting a multistage RC-ladder circuit in the base bias circuit of the amplifier. Since heat flux owing to self-heating in the transistor can be approximated with a multistage thermal RC-ladder circuit, the canceling of IMD by an additional electrical memory effect generated from the RC-ladder circuit is predicted. The memory effects cause asymmetrical characteristics between upper and lower IMD. The IMD caused by the memory effects is expressed as a vector sum of each origin. By adjusting an electrical reactance characteristic for sub-harmonics affected by the thermal memory effect in the amplifier circuit, the asymmetric characteristic is symmetrized. The parameters of the RC-ladder circuit were estimated so that the adjusted electrical reactance characteristic is reproduced in simulation. A fabricated InGaP/GaAs HBT amplifier with the thermal memory effect compensation circuit exhibited a symmetrized and suppressed IMD characteristics.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E93.C.958/_p
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@ARTICLE{e93-c_7_958,
author={Ryo ISHIKAWA, Junichi KIMURA, Yukio TAKAHASHI, Kazuhiko HONJO, },
journal={IEICE TRANSACTIONS on Electronics},
title={Distortion Compensation for Thermal Memory Effect on InGaP/GaAs HBT Amplifier by Inserting RC-Ladder Circuit in Base Bias Circuit},
year={2010},
volume={E93-C},
number={7},
pages={958-965},
abstract={An inter-modulation distortion (IMD) compensation method for thermal memory effect using a multistage RC-ladder circuit has been proposed. The IMD caused by the thermal memory effect on an InGaP/GaAs HBT amplifier was compensated for by inserting a multistage RC-ladder circuit in the base bias circuit of the amplifier. Since heat flux owing to self-heating in the transistor can be approximated with a multistage thermal RC-ladder circuit, the canceling of IMD by an additional electrical memory effect generated from the RC-ladder circuit is predicted. The memory effects cause asymmetrical characteristics between upper and lower IMD. The IMD caused by the memory effects is expressed as a vector sum of each origin. By adjusting an electrical reactance characteristic for sub-harmonics affected by the thermal memory effect in the amplifier circuit, the asymmetric characteristic is symmetrized. The parameters of the RC-ladder circuit were estimated so that the adjusted electrical reactance characteristic is reproduced in simulation. A fabricated InGaP/GaAs HBT amplifier with the thermal memory effect compensation circuit exhibited a symmetrized and suppressed IMD characteristics.},
keywords={},
doi={10.1587/transele.E93.C.958},
ISSN={1745-1353},
month={July},}
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TY - JOUR
TI - Distortion Compensation for Thermal Memory Effect on InGaP/GaAs HBT Amplifier by Inserting RC-Ladder Circuit in Base Bias Circuit
T2 - IEICE TRANSACTIONS on Electronics
SP - 958
EP - 965
AU - Ryo ISHIKAWA
AU - Junichi KIMURA
AU - Yukio TAKAHASHI
AU - Kazuhiko HONJO
PY - 2010
DO - 10.1587/transele.E93.C.958
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E93-C
IS - 7
JA - IEICE TRANSACTIONS on Electronics
Y1 - July 2010
AB - An inter-modulation distortion (IMD) compensation method for thermal memory effect using a multistage RC-ladder circuit has been proposed. The IMD caused by the thermal memory effect on an InGaP/GaAs HBT amplifier was compensated for by inserting a multistage RC-ladder circuit in the base bias circuit of the amplifier. Since heat flux owing to self-heating in the transistor can be approximated with a multistage thermal RC-ladder circuit, the canceling of IMD by an additional electrical memory effect generated from the RC-ladder circuit is predicted. The memory effects cause asymmetrical characteristics between upper and lower IMD. The IMD caused by the memory effects is expressed as a vector sum of each origin. By adjusting an electrical reactance characteristic for sub-harmonics affected by the thermal memory effect in the amplifier circuit, the asymmetric characteristic is symmetrized. The parameters of the RC-ladder circuit were estimated so that the adjusted electrical reactance characteristic is reproduced in simulation. A fabricated InGaP/GaAs HBT amplifier with the thermal memory effect compensation circuit exhibited a symmetrized and suppressed IMD characteristics.
ER -