The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
A alta integração e a operação de baixo consumo de energia dos circuitos integrados aumentam a sensibilidade ao ruído. Portanto, é importante reduzir o ruído dos circuitos. Um transcondutor de deslocamento de polarização é conhecido como transcondutor linear. Espera-se que a sensibilidade ao ruído do transcondutor seja maior devido à melhoria da linearidade e à redução da dissipação de potência. Este artigo propõe um método de projeto para redução de ruído considerando alta linearidade, redução da dissipação de potência e pequeno tamanho do circuito.
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Shintaro NAKAMURA, Fujihiko MATSUMOTO, Pravit TONGPOON, Yasuaki NOGUCHI, "Noise Analysis and Design of Low-Noise Bias-Offset MOS Transconductor" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 1, pp. 128-131, January 2011, doi: 10.1587/transele.E94.C.128.
Abstract: High integration and low power operation of integrated circuits make noise sensitivity high. Therefore, it is important to reduce noise of circuits. A bias-offset transconductor is known as a linear transconductor. It is expected that noise sensitivity of the transconductor becomes higher due to improvement of linearity and reduction of power dissipation. This paper proposes a design method to reduce noise considering high linearity, reduction of power dissipation and small circuit size.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.128/_p
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@ARTICLE{e94-c_1_128,
author={Shintaro NAKAMURA, Fujihiko MATSUMOTO, Pravit TONGPOON, Yasuaki NOGUCHI, },
journal={IEICE TRANSACTIONS on Electronics},
title={Noise Analysis and Design of Low-Noise Bias-Offset MOS Transconductor},
year={2011},
volume={E94-C},
number={1},
pages={128-131},
abstract={High integration and low power operation of integrated circuits make noise sensitivity high. Therefore, it is important to reduce noise of circuits. A bias-offset transconductor is known as a linear transconductor. It is expected that noise sensitivity of the transconductor becomes higher due to improvement of linearity and reduction of power dissipation. This paper proposes a design method to reduce noise considering high linearity, reduction of power dissipation and small circuit size.},
keywords={},
doi={10.1587/transele.E94.C.128},
ISSN={1745-1353},
month={January},}
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TY - JOUR
TI - Noise Analysis and Design of Low-Noise Bias-Offset MOS Transconductor
T2 - IEICE TRANSACTIONS on Electronics
SP - 128
EP - 131
AU - Shintaro NAKAMURA
AU - Fujihiko MATSUMOTO
AU - Pravit TONGPOON
AU - Yasuaki NOGUCHI
PY - 2011
DO - 10.1587/transele.E94.C.128
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 1
JA - IEICE TRANSACTIONS on Electronics
Y1 - January 2011
AB - High integration and low power operation of integrated circuits make noise sensitivity high. Therefore, it is important to reduce noise of circuits. A bias-offset transconductor is known as a linear transconductor. It is expected that noise sensitivity of the transconductor becomes higher due to improvement of linearity and reduction of power dissipation. This paper proposes a design method to reduce noise considering high linearity, reduction of power dissipation and small circuit size.
ER -