The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Neste artigo, um circuito de bomba de carga de três estágios com entrada de 0.18 V aplicando polarização direta do corpo é proposto para aplicações de coleta de energia. Na bomba de carga desenvolvida, todos os MOSFETs são polarizados diretamente usando as tensões entre estágios/saída. Ao aplicar a bomba de carga proposta como inicialização no conversor boost, a tensão de entrada de kick-up do conversor boost é reduzida para 0.18 V. Para verificar as características do circuito, a bomba convencional de carga de polarização de corpo zero e a carga de polarização direta proposta bomba foram fabricadas com processo CMOS de 65 nm. A corrente de saída medida da bomba de carga proposta sob tensão de entrada de 0.18 V é aumentada em 170% em comparação com a convencional na tensão de saída de 0.5 V. Além disso, o conversor boost aumenta com sucesso a entrada de 0.18 V para mais de 0.65 -V saída.
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Po-Hung CHEN, Koichi ISHIDA, Xin ZHANG, Yasuyuki OKUMA, Yoshikatsu RYU, Makoto TAKAMIYA, Takayasu SAKURAI, "0.18-V Input Charge Pump with Forward Body Bias to Startup Boost Converter for Energy Harvesting Applications" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 4, pp. 598-604, April 2011, doi: 10.1587/transele.E94.C.598.
Abstract: In this paper, a 0.18-V input three-stage charge pump circuit applying forward body bias is proposed for energy harvesting applications. In the developed charge pump, all the MOSFETs are forward body biased by using the inter-stage/output voltages. By applying the proposed charge pump as the startup in the boost converter, the kick-up input voltage of the boost converter is reduced to 0.18 V. To verify the circuit characteristics, the conventional zero body bias charge pump and the proposed forward body bias charge pump were fabricated with 65 nm CMOS process. The measured output current of the proposed charge pump under 0.18-V input voltage is increased by 170% comparing to the conventional one at the output voltage of 0.5 V. In addition, the boost converter successfully boosts the 0.18-V input to higher than 0.65-V output.
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.598/_p
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@ARTICLE{e94-c_4_598,
author={Po-Hung CHEN, Koichi ISHIDA, Xin ZHANG, Yasuyuki OKUMA, Yoshikatsu RYU, Makoto TAKAMIYA, Takayasu SAKURAI, },
journal={IEICE TRANSACTIONS on Electronics},
title={0.18-V Input Charge Pump with Forward Body Bias to Startup Boost Converter for Energy Harvesting Applications},
year={2011},
volume={E94-C},
number={4},
pages={598-604},
abstract={In this paper, a 0.18-V input three-stage charge pump circuit applying forward body bias is proposed for energy harvesting applications. In the developed charge pump, all the MOSFETs are forward body biased by using the inter-stage/output voltages. By applying the proposed charge pump as the startup in the boost converter, the kick-up input voltage of the boost converter is reduced to 0.18 V. To verify the circuit characteristics, the conventional zero body bias charge pump and the proposed forward body bias charge pump were fabricated with 65 nm CMOS process. The measured output current of the proposed charge pump under 0.18-V input voltage is increased by 170% comparing to the conventional one at the output voltage of 0.5 V. In addition, the boost converter successfully boosts the 0.18-V input to higher than 0.65-V output.},
keywords={},
doi={10.1587/transele.E94.C.598},
ISSN={1745-1353},
month={April},}
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TY - JOUR
TI - 0.18-V Input Charge Pump with Forward Body Bias to Startup Boost Converter for Energy Harvesting Applications
T2 - IEICE TRANSACTIONS on Electronics
SP - 598
EP - 604
AU - Po-Hung CHEN
AU - Koichi ISHIDA
AU - Xin ZHANG
AU - Yasuyuki OKUMA
AU - Yoshikatsu RYU
AU - Makoto TAKAMIYA
AU - Takayasu SAKURAI
PY - 2011
DO - 10.1587/transele.E94.C.598
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2011
AB - In this paper, a 0.18-V input three-stage charge pump circuit applying forward body bias is proposed for energy harvesting applications. In the developed charge pump, all the MOSFETs are forward body biased by using the inter-stage/output voltages. By applying the proposed charge pump as the startup in the boost converter, the kick-up input voltage of the boost converter is reduced to 0.18 V. To verify the circuit characteristics, the conventional zero body bias charge pump and the proposed forward body bias charge pump were fabricated with 65 nm CMOS process. The measured output current of the proposed charge pump under 0.18-V input voltage is increased by 170% comparing to the conventional one at the output voltage of 0.5 V. In addition, the boost converter successfully boosts the 0.18-V input to higher than 0.65-V output.
ER -