The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Este artigo apresenta uma técnica de compensação de resistor para um bandgap CMOS e referência de corrente, que utiliza vários resistores de alto coeficiente de temperatura positivo (TC), um amplificador de transcondutância operacional (OTA) de dois estágios e um circuito de inicialização simplificado na faixa de 0.35 µm. Processo CMOS. No bandgap proposto e na referência de corrente, numerosos resistores compensados, que possuem um alto coeficiente de temperatura positivo (TC), são adicionados aos dispositivos parasitas de transistor de junção bipolar npn e pnp, para gerar uma referência de tensão e referência de corrente independentes de temperatura. As medições verificam uma referência de corrente de 735.6 nA, uma referência de tensão de 888.1 mV e um consumo de energia de 91.28 µW a uma tensão de alimentação de 3.3 V. A tensão TC é de 49 ppm/
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Guo-Ming SUNG, Ying-Tsu LAI, Chien-Lin LU, "A Resistor-Compensation Technique for CMOS Bandgap and Current Reference with Simplified Start-Up Circuit" in IEICE TRANSACTIONS on Electronics,
vol. E94-C, no. 4, pp. 670-673, April 2011, doi: 10.1587/transele.E94.C.670.
Abstract: This paper presents a resistor-compensation technique for a CMOS bandgap and current reference, which utilizes various high positive temperature coefficient (TC) resistors, a two-stage operational transconductance amplifier (OTA) and a simplified start-up circuit in the 0.35-µm CMOS process. In the proposed bandgap and current reference, numerous compensated resistors, which have a high positive temperature coefficient (TC), are added to the parasitic n-p-n and p-n-p bipolar junction transistor devices, to generate a temperature-independent voltage reference and current reference. The measurements verify a current reference of 735.6 nA, the voltage reference of 888.1 mV, and the power consumption of 91.28 µW at a supply voltage of 3.3 V. The voltage TC is 49 ppm/
URL: https://global.ieice.org/en_transactions/electronics/10.1587/transele.E94.C.670/_p
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@ARTICLE{e94-c_4_670,
author={Guo-Ming SUNG, Ying-Tsu LAI, Chien-Lin LU, },
journal={IEICE TRANSACTIONS on Electronics},
title={A Resistor-Compensation Technique for CMOS Bandgap and Current Reference with Simplified Start-Up Circuit},
year={2011},
volume={E94-C},
number={4},
pages={670-673},
abstract={This paper presents a resistor-compensation technique for a CMOS bandgap and current reference, which utilizes various high positive temperature coefficient (TC) resistors, a two-stage operational transconductance amplifier (OTA) and a simplified start-up circuit in the 0.35-µm CMOS process. In the proposed bandgap and current reference, numerous compensated resistors, which have a high positive temperature coefficient (TC), are added to the parasitic n-p-n and p-n-p bipolar junction transistor devices, to generate a temperature-independent voltage reference and current reference. The measurements verify a current reference of 735.6 nA, the voltage reference of 888.1 mV, and the power consumption of 91.28 µW at a supply voltage of 3.3 V. The voltage TC is 49 ppm/
keywords={},
doi={10.1587/transele.E94.C.670},
ISSN={1745-1353},
month={April},}
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TY - JOUR
TI - A Resistor-Compensation Technique for CMOS Bandgap and Current Reference with Simplified Start-Up Circuit
T2 - IEICE TRANSACTIONS on Electronics
SP - 670
EP - 673
AU - Guo-Ming SUNG
AU - Ying-Tsu LAI
AU - Chien-Lin LU
PY - 2011
DO - 10.1587/transele.E94.C.670
JO - IEICE TRANSACTIONS on Electronics
SN - 1745-1353
VL - E94-C
IS - 4
JA - IEICE TRANSACTIONS on Electronics
Y1 - April 2011
AB - This paper presents a resistor-compensation technique for a CMOS bandgap and current reference, which utilizes various high positive temperature coefficient (TC) resistors, a two-stage operational transconductance amplifier (OTA) and a simplified start-up circuit in the 0.35-µm CMOS process. In the proposed bandgap and current reference, numerous compensated resistors, which have a high positive temperature coefficient (TC), are added to the parasitic n-p-n and p-n-p bipolar junction transistor devices, to generate a temperature-independent voltage reference and current reference. The measurements verify a current reference of 735.6 nA, the voltage reference of 888.1 mV, and the power consumption of 91.28 µW at a supply voltage of 3.3 V. The voltage TC is 49 ppm/
ER -