The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
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The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
As tarefas urgentes da modelagem MOSFET para simulação de circuitos são a fácil adaptação a novos fenômenos físicos que surgem para o avanço das tecnologias e, é claro, precisão de simulação suficiente. As abordagens atualmente adotadas para o desenvolvimento de tais modelos MOSFET são resumidas. São discutidas suas capacidades para realizar essas tarefas, bem como os importantes problemas remanescentes. O foco principal é dado ao modelo HiSIM, o primeiro modelo comumente disponível baseado na aproximação de deriva-difusão desenvolvida para nó de tecnologia MOSFET de 0.10 µm.
Mitiko MIURA-MATTAUSCH
Hiroaki UENO
Hans Juergen MATTAUSCH
Shigetaka KUMASHIRO
Tetsuya YAMAGUCHI
Kyoji YAMASHITA
Noriaki NAKAYAMA
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Mitiko MIURA-MATTAUSCH, Hiroaki UENO, Hans Juergen MATTAUSCH, Shigetaka KUMASHIRO, Tetsuya YAMAGUCHI, Kyoji YAMASHITA, Noriaki NAKAYAMA, "Circuit Simulation Models for Coming MOSFET Generations" in IEICE TRANSACTIONS on Fundamentals,
vol. E85-A, no. 4, pp. 740-748, April 2002, doi: .
Abstract: The urgent tasks of MOSFET modeling for circuit simulation are easy adaptation to new physical phenomena arising for advancing technologies, and, of course, sufficient simulation accuracy. Approaches currently being pursued for developing such MOSFET models are summarized. Their capabilities for accomplishing these tasks as well as the important remaining problems are discussed. Main focus is given on the model HiSIM, the first commonly available model based on the drift-diffusion approximation developed for 0.10 µm MOSFET technology node.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/e85-a_4_740/_p
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@ARTICLE{e85-a_4_740,
author={Mitiko MIURA-MATTAUSCH, Hiroaki UENO, Hans Juergen MATTAUSCH, Shigetaka KUMASHIRO, Tetsuya YAMAGUCHI, Kyoji YAMASHITA, Noriaki NAKAYAMA, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Circuit Simulation Models for Coming MOSFET Generations},
year={2002},
volume={E85-A},
number={4},
pages={740-748},
abstract={The urgent tasks of MOSFET modeling for circuit simulation are easy adaptation to new physical phenomena arising for advancing technologies, and, of course, sufficient simulation accuracy. Approaches currently being pursued for developing such MOSFET models are summarized. Their capabilities for accomplishing these tasks as well as the important remaining problems are discussed. Main focus is given on the model HiSIM, the first commonly available model based on the drift-diffusion approximation developed for 0.10 µm MOSFET technology node.},
keywords={},
doi={},
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month={April},}
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TY - JOUR
TI - Circuit Simulation Models for Coming MOSFET Generations
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 740
EP - 748
AU - Mitiko MIURA-MATTAUSCH
AU - Hiroaki UENO
AU - Hans Juergen MATTAUSCH
AU - Shigetaka KUMASHIRO
AU - Tetsuya YAMAGUCHI
AU - Kyoji YAMASHITA
AU - Noriaki NAKAYAMA
PY - 2002
DO -
JO - IEICE TRANSACTIONS on Fundamentals
SN -
VL - E85-A
IS - 4
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - April 2002
AB - The urgent tasks of MOSFET modeling for circuit simulation are easy adaptation to new physical phenomena arising for advancing technologies, and, of course, sufficient simulation accuracy. Approaches currently being pursued for developing such MOSFET models are summarized. Their capabilities for accomplishing these tasks as well as the important remaining problems are discussed. Main focus is given on the model HiSIM, the first commonly available model based on the drift-diffusion approximation developed for 0.10 µm MOSFET technology node.
ER -