The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Foi desenvolvido um circuito de inicialização intermitente (ISC) tolerante à variação de temperatura que suprime a corrente quiescente para 300nA a 0.48V. O ISC é um circuito chave para um sensor sem fio sem bateria que pode detectar uma corrente de geração de 1μA de fontes de coleta de energia a partir dos intervalos dos sinais sem fio. O ISC consiste em um detector de tensão ultrabaixa composto por um MOSFET do tipo de depleção e MOSFETs de baixo Vth, um circuito de bomba de carga reforçado por porta do tipo Dickson e um circuito de controle de chave de energia. O detector consiste em um comparador de referência de tensão e um circuito de trava controlado por feedback para uma função de histerese. O comparador de referência de tensão, que possui um estágio de fonte comum com uma carga de fonte de corrente constante dobrada composta por um nMOSFET do tipo depleção, permite reduzir a dependência da temperatura da tensão de detecção, ao mesmo tempo que suprime a corrente quiescente para 300nA a 0.48 V. O ISC fabricado com tecnologia CMOS de silício sobre isolador totalmente esgotado (FD-SOI) também suprime a variação da corrente quiescente. Para verificar a eficácia do circuito, o ISC foi fabricado em um processo CMOS FD-SOI triplo-Vth de 0.8 μm. Um experimento no sistema fabricado, o ISC aumenta a tensão de entrada de 0.48V para 2.4V enquanto suprime a corrente quiescente para menos de 300nA a 0.48V. O coeficiente de temperatura medido da tensão de detecção foi de ±50ppm/°C. A flutuação da corrente quiescente foi de 250nA ± 90nA na faixa de temperatura de 0°C a 40°C. Também foi fabricado um sensor de captação de energia intermitente com o ISC. O sensor pode detectar uma corrente de geração de 1μA em fontes EH com uma precisão de ±15% na faixa de temperatura de 0°C a 40°C. Também foi aplicado com sucesso a um sistema de sensor de monitoramento de planta sem fio e autoalimentado.
Minoru SUDO
ABLIC Inc.,Ritsumeikan University
Fumiyasu UTSUNOMIYA
ABLIC Inc.,Ritsumeikan University
Ami TANAKA
Ritsumeikan University
Takakuni DOUSEKI
Ritsumeikan University
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Minoru SUDO, Fumiyasu UTSUNOMIYA, Ami TANAKA, Takakuni DOUSEKI, "Temperature-Robust 0.48-V FD-SOI Intermittent Startup Circuit with 300-nA Quiescent Current for Batteryless Wireless Sensor Capable of 1-μA Energy Harvesting Sources" in IEICE TRANSACTIONS on Fundamentals,
vol. E104-A, no. 2, pp. 506-515, February 2021, doi: 10.1587/transfun.2020GCP0005.
Abstract: A temperature-variation-tolerant intermittent startup circuit (ISC) that suppresses quiescent current to 300nA at 0.48V was developed. The ISC is a key circuit for a batteryless wireless sensor that can detect a 1μA generation current of energy harvesting sources from the intervals of wireless signals. The ISC consists of an ultralow-voltage detector composed of a depletion-type MOSFET and low-Vth MOSFETs, a Dickson-type gate-boosted charge pump circuit, and a power-switch control circuit. The detector consists of a voltage reference comparator and a feedback-controlled latch circuit for a hysteresis function. The voltage reference comparator, which has a common source stage with a folded constant-current-source load composed of a depletion-type nMOSFET, makes it possible to reduce the temperature dependency of the detection voltage, while suppressing the quiescent current to 300nA at 0.48V. The ISC fabricated with fully-depleted silicon-on-insulator (FD-SOI) CMOS technology also suppresses the variation of the quiescent current. To verify the effectiveness of the circuit, the ISC was fabricated in a 0.8-μm triple-Vth FD-SOI CMOS process. An experiment on the fabricated system, the ISC boosts the input voltage of 0.48V to 2.4V while suppressing the quiescent current to less than 300nA at 0.48V. The measured temperature coefficient of the detection voltage was ±50ppm/°C. The fluctuation of the quiescent current was 250nA ± 90nA in the temperature range from 0°C to 40°C. An intermittent energy harvesting sensor with the ISC was also fabricated. The sensor could detect a generation current of 1μA at EH sources within an accuracy of ±15% in the temperature range from 0°C to 40°C. It was also successfully applied to a self-powered wireless plant-monitoring sensor system.
URL: https://global.ieice.org/en_transactions/fundamentals/10.1587/transfun.2020GCP0005/_p
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@ARTICLE{e104-a_2_506,
author={Minoru SUDO, Fumiyasu UTSUNOMIYA, Ami TANAKA, Takakuni DOUSEKI, },
journal={IEICE TRANSACTIONS on Fundamentals},
title={Temperature-Robust 0.48-V FD-SOI Intermittent Startup Circuit with 300-nA Quiescent Current for Batteryless Wireless Sensor Capable of 1-μA Energy Harvesting Sources},
year={2021},
volume={E104-A},
number={2},
pages={506-515},
abstract={A temperature-variation-tolerant intermittent startup circuit (ISC) that suppresses quiescent current to 300nA at 0.48V was developed. The ISC is a key circuit for a batteryless wireless sensor that can detect a 1μA generation current of energy harvesting sources from the intervals of wireless signals. The ISC consists of an ultralow-voltage detector composed of a depletion-type MOSFET and low-Vth MOSFETs, a Dickson-type gate-boosted charge pump circuit, and a power-switch control circuit. The detector consists of a voltage reference comparator and a feedback-controlled latch circuit for a hysteresis function. The voltage reference comparator, which has a common source stage with a folded constant-current-source load composed of a depletion-type nMOSFET, makes it possible to reduce the temperature dependency of the detection voltage, while suppressing the quiescent current to 300nA at 0.48V. The ISC fabricated with fully-depleted silicon-on-insulator (FD-SOI) CMOS technology also suppresses the variation of the quiescent current. To verify the effectiveness of the circuit, the ISC was fabricated in a 0.8-μm triple-Vth FD-SOI CMOS process. An experiment on the fabricated system, the ISC boosts the input voltage of 0.48V to 2.4V while suppressing the quiescent current to less than 300nA at 0.48V. The measured temperature coefficient of the detection voltage was ±50ppm/°C. The fluctuation of the quiescent current was 250nA ± 90nA in the temperature range from 0°C to 40°C. An intermittent energy harvesting sensor with the ISC was also fabricated. The sensor could detect a generation current of 1μA at EH sources within an accuracy of ±15% in the temperature range from 0°C to 40°C. It was also successfully applied to a self-powered wireless plant-monitoring sensor system.},
keywords={},
doi={10.1587/transfun.2020GCP0005},
ISSN={1745-1337},
month={February},}
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TY - JOUR
TI - Temperature-Robust 0.48-V FD-SOI Intermittent Startup Circuit with 300-nA Quiescent Current for Batteryless Wireless Sensor Capable of 1-μA Energy Harvesting Sources
T2 - IEICE TRANSACTIONS on Fundamentals
SP - 506
EP - 515
AU - Minoru SUDO
AU - Fumiyasu UTSUNOMIYA
AU - Ami TANAKA
AU - Takakuni DOUSEKI
PY - 2021
DO - 10.1587/transfun.2020GCP0005
JO - IEICE TRANSACTIONS on Fundamentals
SN - 1745-1337
VL - E104-A
IS - 2
JA - IEICE TRANSACTIONS on Fundamentals
Y1 - February 2021
AB - A temperature-variation-tolerant intermittent startup circuit (ISC) that suppresses quiescent current to 300nA at 0.48V was developed. The ISC is a key circuit for a batteryless wireless sensor that can detect a 1μA generation current of energy harvesting sources from the intervals of wireless signals. The ISC consists of an ultralow-voltage detector composed of a depletion-type MOSFET and low-Vth MOSFETs, a Dickson-type gate-boosted charge pump circuit, and a power-switch control circuit. The detector consists of a voltage reference comparator and a feedback-controlled latch circuit for a hysteresis function. The voltage reference comparator, which has a common source stage with a folded constant-current-source load composed of a depletion-type nMOSFET, makes it possible to reduce the temperature dependency of the detection voltage, while suppressing the quiescent current to 300nA at 0.48V. The ISC fabricated with fully-depleted silicon-on-insulator (FD-SOI) CMOS technology also suppresses the variation of the quiescent current. To verify the effectiveness of the circuit, the ISC was fabricated in a 0.8-μm triple-Vth FD-SOI CMOS process. An experiment on the fabricated system, the ISC boosts the input voltage of 0.48V to 2.4V while suppressing the quiescent current to less than 300nA at 0.48V. The measured temperature coefficient of the detection voltage was ±50ppm/°C. The fluctuation of the quiescent current was 250nA ± 90nA in the temperature range from 0°C to 40°C. An intermittent energy harvesting sensor with the ISC was also fabricated. The sensor could detect a generation current of 1μA at EH sources within an accuracy of ±15% in the temperature range from 0°C to 40°C. It was also successfully applied to a self-powered wireless plant-monitoring sensor system.
ER -