The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Este artigo descreve um novo circuito de sensor IDDQ que é acionado apenas por um IDDQ anormal. O circuito do sensor tem sensibilidade relativamente alta e pode operar com baixa tensão de alimentação. Baseado em uma ideia muito simples, requer duas fontes de alimentação adicionais. Ele pode operar em VDD de 5 V ou 3.3 V com o mesmo design. Os resultados da simulação mostram que ele pode detectar um IDDQ anormal de 16 µA em VDD de 3.3 V. Este circuito sensor causa uma menor queda de tensão e menor penalidade de desempenho no circuito em teste do que outros.
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Yukiya MIURA, "An IDDQ Sensor Driven by Abnormal IDDQ" in IEICE TRANSACTIONS on Information,
vol. E83-D, no. 10, pp. 1860-1867, October 2000, doi: .
Abstract: This paper describes a novel IDDQ sensor circuit that is driven by only an abnormal IDDQ. The sensor circuit has relatively high sensitivity and can operate at a low supply voltage. Based on a very simple idea, it requires two additional power supplies. It can operate at either 5-V or 3.3-V VDD with the same design. Simulation results show that it can detect a 16-µA abnormal IDDQ at 3.3-V VDD. This sensor circuit causes a smaller voltage drop and smaller performance penalty in the circuit under test than other ones.
URL: https://global.ieice.org/en_transactions/information/10.1587/e83-d_10_1860/_p
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@ARTICLE{e83-d_10_1860,
author={Yukiya MIURA, },
journal={IEICE TRANSACTIONS on Information},
title={An IDDQ Sensor Driven by Abnormal IDDQ},
year={2000},
volume={E83-D},
number={10},
pages={1860-1867},
abstract={This paper describes a novel IDDQ sensor circuit that is driven by only an abnormal IDDQ. The sensor circuit has relatively high sensitivity and can operate at a low supply voltage. Based on a very simple idea, it requires two additional power supplies. It can operate at either 5-V or 3.3-V VDD with the same design. Simulation results show that it can detect a 16-µA abnormal IDDQ at 3.3-V VDD. This sensor circuit causes a smaller voltage drop and smaller performance penalty in the circuit under test than other ones.},
keywords={},
doi={},
ISSN={},
month={October},}
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TY - JOUR
TI - An IDDQ Sensor Driven by Abnormal IDDQ
T2 - IEICE TRANSACTIONS on Information
SP - 1860
EP - 1867
AU - Yukiya MIURA
PY - 2000
DO -
JO - IEICE TRANSACTIONS on Information
SN -
VL - E83-D
IS - 10
JA - IEICE TRANSACTIONS on Information
Y1 - October 2000
AB - This paper describes a novel IDDQ sensor circuit that is driven by only an abnormal IDDQ. The sensor circuit has relatively high sensitivity and can operate at a low supply voltage. Based on a very simple idea, it requires two additional power supplies. It can operate at either 5-V or 3.3-V VDD with the same design. Simulation results show that it can detect a 16-µA abnormal IDDQ at 3.3-V VDD. This sensor circuit causes a smaller voltage drop and smaller performance penalty in the circuit under test than other ones.
ER -