The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. ex. Some numerals are expressed as "XNUMX".
Copyrights notice
The original paper is in English. Non-English content has been machine-translated and may contain typographical errors or mistranslations. Copyrights notice
Este artigo descreve uma teoria básica e os resultados experimentais de um RCC (Ringing Choke Converter) no qual um MOS FET é usado como elemento de chaveamento e o circuito de acionamento foi modificado para melhorar a eficiência e as características sob condições sem carga.
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Yoshio NAKATANI, Yakichi KANATA, "RCC with MOS FET" in IEICE TRANSACTIONS on transactions,
vol. E70-E, no. 3, pp. 181-182, March 1987, doi: .
Abstract: This paper describes a basic theory and the experimental results of a RCC (Ringing Choke Converter) in which a MOS FET is used as the switching element and the driving circuit has been modified to improve the efficiency and the characteristics under no-load conditions.
URL: https://global.ieice.org/en_transactions/transactions/10.1587/e70-e_3_181/_p
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@ARTICLE{e70-e_3_181,
author={Yoshio NAKATANI, Yakichi KANATA, },
journal={IEICE TRANSACTIONS on transactions},
title={RCC with MOS FET},
year={1987},
volume={E70-E},
number={3},
pages={181-182},
abstract={This paper describes a basic theory and the experimental results of a RCC (Ringing Choke Converter) in which a MOS FET is used as the switching element and the driving circuit has been modified to improve the efficiency and the characteristics under no-load conditions.},
keywords={},
doi={},
ISSN={},
month={March},}
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TY - JOUR
TI - RCC with MOS FET
T2 - IEICE TRANSACTIONS on transactions
SP - 181
EP - 182
AU - Yoshio NAKATANI
AU - Yakichi KANATA
PY - 1987
DO -
JO - IEICE TRANSACTIONS on transactions
SN -
VL - E70-E
IS - 3
JA - IEICE TRANSACTIONS on transactions
Y1 - March 1987
AB - This paper describes a basic theory and the experimental results of a RCC (Ringing Choke Converter) in which a MOS FET is used as the switching element and the driving circuit has been modified to improve the efficiency and the characteristics under no-load conditions.
ER -